GaAs nanostructuring by self-organized stencil mask ion lithography

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	GaAs nanostructuring by self-organized stencil mask ion lithography
	Zhang, ZQ ; Chiappe, D ; Toma, A ; Boragno, C ; Guo, JD ; Wang, EG ; de Mongeot, FB
刊名	JOURNAL OF APPLIED PHYSICS
	2011
卷号	110 期号:11
关键词	SURFACE-DIFFUSION MORPHOLOGY EVOLUTION FILMS
ISSN号	0021-8979
通讯作者	de Mongeot, FB: Univ Genoa, Dipartimento Fis, Via Dodecaneso 33, I-16146 Genoa, Italy.
中文摘要	We report on nanoscale patterning of GaAs (100) semiconductor substrates employing an ion projection through a self-organized stencil mask. The nanostructured mask, formed by ion beam sputtering of a polycrystalline Au film, allows driving the GaAs morphology strongly out of equilibrium. In a second stage, after the stencil mask is removed, we quantitatively follow the dynamical evolution of the forced system toward equilibrium by analyzing the evolution of the power spectral density of the height profiles and their slope and curvature distribution. Strong differences are observed by comparing the relaxation dynamics of GaAs surfaces which tend to smoothen with that of glass, a material which instead tends to non-linearly amplify the pattern once driven out of equilibrium by the stencil mask. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665693]
收录类别	SCI
资助信息	MOST; NSF of China; MIUR [2008J858Y7]; CNISM; MAE; Fondazione CARIGE; ENEA under MSE
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/38526]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhang, ZQ,Chiappe, D,Toma, A,et al. GaAs nanostructuring by self-organized stencil mask ion lithography[J]. JOURNAL OF APPLIED PHYSICS,2011,110(11).
APA	Zhang, ZQ.,Chiappe, D.,Toma, A.,Boragno, C.,Guo, JD.,...&de Mongeot, FB.(2011).GaAs nanostructuring by self-organized stencil mask ion lithography.JOURNAL OF APPLIED PHYSICS,110(11).
MLA	Zhang, ZQ,et al."GaAs nanostructuring by self-organized stencil mask ion lithography".JOURNAL OF APPLIED PHYSICS 110.11(2011).