Formation of AlN films by Al evaporation with nitrogen ion beam bombardment

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	Formation of AlN films by Al evaporation with nitrogen ion beam bombardment
	He, XJ ; Yang, SZ ; Tao, K ; Fan, YD
刊名	MATERIALS CHEMISTRY AND PHYSICS
	1997
卷号	51 期号:2 页码:199
关键词	NITRIDE THIN-FILMS ALUMINUM NITRIDE DEPOSITION GROWTH
ISSN号	0254-0584
通讯作者	He, XJ: CHINESE ACAD SCI,INST PHYS,GRP 101,POB 603,BEIJING 100080,PEOPLES R CHINA.
中文摘要	Aluminum nitride films were synthesized by electron gun evaporation of aluminum on to Si(111) wafer with simultaneous bombardment by nitrogen ions. Under special conditions, polycrystalline AlN films of fine crystallinity were obtained. (C) 1997 Elsevier Science S.A.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/38383]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	He, XJ,Yang, SZ,Tao, K,et al. Formation of AlN films by Al evaporation with nitrogen ion beam bombardment[J]. MATERIALS CHEMISTRY AND PHYSICS,1997,51(2):199.
APA	He, XJ,Yang, SZ,Tao, K,&Fan, YD.(1997).Formation of AlN films by Al evaporation with nitrogen ion beam bombardment.MATERIALS CHEMISTRY AND PHYSICS,51(2),199.
MLA	He, XJ,et al."Formation of AlN films by Al evaporation with nitrogen ion beam bombardment".MATERIALS CHEMISTRY AND PHYSICS 51.2(1997):199.