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Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics
Lv, YJ ; Lin, ZJ ; Meng, LG ; Yu, YX ; Luan, CB ; Cao, ZF ; Chen, H ; Sun, BQ ; Wang, ZG
刊名APPLIED PHYSICS LETTERS
2011
卷号99期号:12
ISSN号0003-6951
通讯作者Lin, ZJ: Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
中文摘要The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by time-resolved photoluminescence spectroscopy. By applying an external electric field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost vanish when the Rashba term compensates exactly the Dresselhaus one. The measurements under a transverse magnetic field demonstrate that the electron spin relaxation time for the three space directions can be tuned simultaneously with the applied electric field.
收录类别SCI
资助信息National Natural Science Foundation of China [10774090]; National Basic Research Program of China [2007CB936602]
语种英语
公开日期2013-09-17
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/37590]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Lv, YJ,Lin, ZJ,Meng, LG,et al. Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics[J]. APPLIED PHYSICS LETTERS,2011,99(12).
APA Lv, YJ.,Lin, ZJ.,Meng, LG.,Yu, YX.,Luan, CB.,...&Wang, ZG.(2011).Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics.APPLIED PHYSICS LETTERS,99(12).
MLA Lv, YJ,et al."Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics".APPLIED PHYSICS LETTERS 99.12(2011).
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