Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier

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	Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier
	He, SM ; Bai, HL ; Liu, GL ; Li, Q ; Yan, SS ; Chen, YX ; Mei, LM ; Liu, HF ; Wang, SG ; Han, XF
刊名	APPLIED PHYSICS LETTERS
	2012
卷号	100 期号:13
关键词	MODEL
ISSN号	0003-6951
通讯作者	He, SM: Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
中文摘要	The fully epitaxial ZnO-based ZnO:Co/ZnO:Mg/ZnO:Co magnetic tunnel junctions were grown on Al2O3(0001) substrate by oxygen plasma-assisted molecular beam epitaxy. The magnetoresistance behavior and spin injection through ZnO:Mg barrier were investigated. An enhanced positive tunnel magnetoresistance ratio of 85.6% is observed at 1.8 T at 5 K. The junction resistance at zero magnetic field is linear with respect to temperature power law T-4/3 between 5 K and 70 K, indicating that carriers tunnel through ZnO: Mg barrier via two localized states. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3698151]
收录类别	SCI
资助信息	State Key Project of Fundamental Research of China [2009CB929202, 2009CB929203]; NSFC [10834001, 50972163]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/37395]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	He, SM,Bai, HL,Liu, GL,et al. Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier[J]. APPLIED PHYSICS LETTERS,2012,100(13).
APA	He, SM.,Bai, HL.,Liu, GL.,Li, Q.,Yan, SS.,...&Han, XF.(2012).Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier.APPLIED PHYSICS LETTERS,100(13).
MLA	He, SM,et al."Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier".APPLIED PHYSICS LETTERS 100.13(2012).