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Electronic behavior of superconducting SmFeAsO0.75
Sun, Y ; Ding, Y ; Zheng, BC ; Shi, ZX ; Ren, ZA
刊名JOURNAL OF APPLIED PHYSICS
2011
卷号109期号:8
关键词ARSENIDE SUPERCONDUCTORS TEMPERATURE-DEPENDENCE LAYERED SUPERCONDUCTOR CRITICAL-FIELD GAP
ISSN号0021-8979
通讯作者Shi, ZX: Southeast Univ, Dept Phys, Nanjing 211189, Peoples R China.
中文摘要High-quality polycrystalline SmFeAsO0.75 was synthesized with a superconducting transition width less than 1 K, and the electronic behavior was systematically studied by transport and specific heat measurements. An obvious superconducting jump was witnessed, together with a very small normalized superconducting jump, Delta C/gamma T-n(c) similar to 0.2, which is much smaller than expected from the BCS theory. A strong temperature-dependent Hall coefficient was found and attributed to the partial gapping of the Fermi surface up to the temperature of 160 K, which was predicted and supported by the emergence of the pseudogap. The charge-carrier density as well as the effective mass were also obtained and discussed in detail. (C) 2011 American Institute of Physics. [doi:10.1063/1.3573667]
收录类别SCI
资助信息Natural Science Foundation of China [10904013]; Ministry of Science and Technology of China [2011CBA00100]; National Science Foundation of Jiangsu Province of China [BK2010421]
语种英语
公开日期2013-09-17
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/37145]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Sun, Y,Ding, Y,Zheng, BC,et al. Electronic behavior of superconducting SmFeAsO0.75[J]. JOURNAL OF APPLIED PHYSICS,2011,109(8).
APA Sun, Y,Ding, Y,Zheng, BC,Shi, ZX,&Ren, ZA.(2011).Electronic behavior of superconducting SmFeAsO0.75.JOURNAL OF APPLIED PHYSICS,109(8).
MLA Sun, Y,et al."Electronic behavior of superconducting SmFeAsO0.75".JOURNAL OF APPLIED PHYSICS 109.8(2011).
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