Electrical transport through individual nanowires with transverse grain boundaries | |
Xue, XY ; Feng, P ; Wang, C ; Chen, YJ ; Wang, YG ; Wang, TH | |
刊名 | APPLIED PHYSICS LETTERS |
2006 | |
卷号 | 89期号:2 |
关键词 | SENSING CHARACTERISTICS SCHOTTKY DIODES ZNO |
ISSN号 | 0003-6951 |
通讯作者 | Wang, TH: Hunan Univ, MicroNano Technol Res Ctr, Changsha 410082, Peoples R China. |
中文摘要 | The growth of well-ordered Mn nanodots arrays on Si(111)-7 x 7 reconstructed surfaces was investigated by means of scanning tunnelling microscopy (STM) as well as kinetic Monte Carlo (KMC) simulation. Mn atoms deposited slowly onto elevated substrates were observed to occupy preferentially on the faulted half unit cells (FHUCs) of the Si(111)-7 x 7 surface. The preference occupancy in the FHUCs, PF, defined as the ratio of the number of FHUCs occupied by Mn nanodots to the number of all occupied in the two halves, decreases with increasing deposition rate as well as decreasing substrate temperature. The KMC simulations, which are in good agreement with the experimental results, were employed to optimize the growth conditions, including deposition rate and substrate temperature, for the self-organized growth of Mn nanodots arrays on Si(111)-7 x 7 reconstructed surfaces. By adjusting the deposition rate, one can control the growth of well-ordered and uniform Mn nanodots arrays to form either a triangular symmetry or a honeycomb one. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/36965] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Xue, XY,Feng, P,Wang, C,et al. Electrical transport through individual nanowires with transverse grain boundaries[J]. APPLIED PHYSICS LETTERS,2006,89(2). |
APA | Xue, XY,Feng, P,Wang, C,Chen, YJ,Wang, YG,&Wang, TH.(2006).Electrical transport through individual nanowires with transverse grain boundaries.APPLIED PHYSICS LETTERS,89(2). |
MLA | Xue, XY,et al."Electrical transport through individual nanowires with transverse grain boundaries".APPLIED PHYSICS LETTERS 89.2(2006). |
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