Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode

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	Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode
	Tian, HT ; Wang, L ; Shi, ZW ; Gao, HJ ; Zhang, SH ; Wang, WX ; Chen, H
刊名	NANOSCALE RESEARCH LETTERS
	2012
卷号	7 页码:1
关键词	QUANTUM-DOT X-RAY SCATTERING SEGREGATION RELAXATION
ISSN号	1931-7573
通讯作者	Wang, L: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, 8,3rd South St, Beijing 100190, Peoples R China.
中文摘要	Embedding a quantum dot [QD] layer between the double barriers of resonant tunneling diode [RTD] is proved to be an effective method to increase the sensitivity of QD-RTD single-photon detector. However, the interfacial flatness of this device would be worsened due to the introduction of quantum dots. In this paper, we demonstrate that the interfacial quality of this device can be optimized through increasing the growth temperature of AlAs up barrier. The glancing incidence X-ray reflectivity and the high-resolution transmission electron microscopy measurements show that the interfacial smoothness has been greatly improved, and the photo-luminescence test indicated that the InAs QDs were maintained at the same time. The smoother interface was attributed to the evaporation of segregated indium atoms at InGaAs surface layer. 73.40.GK, 73.23._b, 73.21.La, 74.62.Dh.
收录类别	SCI
资助信息	National Natural Science Foundation of China [10874212, 61106013]; National High Technology Research and Development Program of China [2009AA033101]; National Basic Research Program of China [2010CB327501, 2011CB925604]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/36555]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Tian, HT,Wang, L,Shi, ZW,et al. Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode[J]. NANOSCALE RESEARCH LETTERS,2012,7:1.
APA	Tian, HT.,Wang, L.,Shi, ZW.,Gao, HJ.,Zhang, SH.,...&Chen, H.(2012).Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode.NANOSCALE RESEARCH LETTERS,7,1.
MLA	Tian, HT,et al."Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode".NANOSCALE RESEARCH LETTERS 7(2012):1.