Dual-gate field effect transistor based on ZnO nanowire with high-K gate dielectrics

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	Dual-gate field effect transistor based on ZnO nanowire with high-K gate dielectrics
	Yao, ZN ; Sun, WJ ; Li, WX ; Yang, HF ; Li, JJ ; Gu, CZ
刊名	MICROELECTRONIC ENGINEERING
	2012
卷号	98 页码:343
ISSN号	0167-9317
通讯作者	Li, JJ: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China.
中文摘要	Techniques for scalable fabrication of one-dimensional or quasi-one-dimensional nanowires are of great importance to observe quantum size effects and build quantum information devices. In this work, we developed a technique for size reduction of both lateral and freestanding tungsten composite nanostructures using focused-ion-beam (FIB) thinning. Different exposure times and ion-beam currents were used to control the final size and the thinning rate and accuracy of a group of nanowires, an individual nanowire and a portion of a nanowire by low-current site-specific milling. A transmission electron microscope image of a thinned superconducting tungsten composite nanowire with width reduced from 80 nm to 50 nm shows uniform shrinking along the length of the wire and high resolution image shows no obvious changes of the morphology after thinning. The variation of the superconducting critical current density upon thinning is insignificant; it is 1.7 x 10(5) and 1.4 x 10(5) A/cm(2) at 4.26 K for the as-deposited and wire with width reduced to 50 nm, respectively. These results suggest that FIB-milling is a potential approach for controllable size reduction enabling the observation of size- and quantum effects. (C) 2012 Elsevier B.V. All rights reserved.
收录类别	SCI
资助信息	National Natural Science Foundation of China [50825206, 10834012, 60801043, 91023012]; National Basic Research Program of China [2009CB930502]; CAS [KJCX2-EW-W02]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/36239]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Yao, ZN,Sun, WJ,Li, WX,et al. Dual-gate field effect transistor based on ZnO nanowire with high-K gate dielectrics[J]. MICROELECTRONIC ENGINEERING,2012,98:343.
APA	Yao, ZN,Sun, WJ,Li, WX,Yang, HF,Li, JJ,&Gu, CZ.(2012).Dual-gate field effect transistor based on ZnO nanowire with high-K gate dielectrics.MICROELECTRONIC ENGINEERING,98,343.
MLA	Yao, ZN,et al."Dual-gate field effect transistor based on ZnO nanowire with high-K gate dielectrics".MICROELECTRONIC ENGINEERING 98(2012):343.