Distribution of Te in GaSb grown by Bridgman technique under microgravity

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	Distribution of Te in GaSb grown by Bridgman technique under microgravity
	Nakamura, T ; Nishinaga, T ; Ge, P ; Huo, C
刊名	JOURNAL OF CRYSTAL GROWTH
	2000
卷号	211 期号:1-4 页码:441
关键词	SEGREGATION
ISSN号	0022-0248
通讯作者	Nishinaga, T: Univ Tokyo, Dept Elect Engn, Grad Sch Engn, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan.
中文摘要	Te concentration in GaSb grown under microgravity was measured by spatially resolved photoluminescence (SRPL). For this purpose, a calibration curve is experimentally obtained to give a relationship between Te concentration and PL energy. It was found that after the growth starts the Te concentration drops at the melted and unmelted interface and recovers rapidly to the level of the initial concentration which means that the distribution is close to that of pure diffusion control. Three possible shapes of the GaSb melt in space were postulated and it is suggested that a wide free surface existed on the GaSb melt during growth. The reason for the absence of strong Marangoni flow is attributed to either the small temperature difference across the free surface or to the presence of a thin oxide film on the melt. (C) 2000 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/36161]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Nakamura, T,Nishinaga, T,Ge, P,et al. Distribution of Te in GaSb grown by Bridgman technique under microgravity[J]. JOURNAL OF CRYSTAL GROWTH,2000,211(1-4):441.
APA	Nakamura, T,Nishinaga, T,Ge, P,&Huo, C.(2000).Distribution of Te in GaSb grown by Bridgman technique under microgravity.JOURNAL OF CRYSTAL GROWTH,211(1-4),441.
MLA	Nakamura, T,et al."Distribution of Te in GaSb grown by Bridgman technique under microgravity".JOURNAL OF CRYSTAL GROWTH 211.1-4(2000):441.