Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er
	Song, SF ; Chen, WD ; Zhu, JJ ; Hsu, CC
刊名	JOURNAL OF CRYSTAL GROWTH
	2004
卷号	265 期号:1-2 页码:78
关键词	EMISSION
ISSN号	0022-0248
通讯作者	Song, SF: Chinese Acad Sci, Inst Semicond, PO 912, Beijing 100083, Peoples R China.
中文摘要	InGaN/GaN multiquantum-well (MQW) structures grown by metalorganic chemical-vapor deposition on n-type GaN and capped by p-type GaN were investigated by cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and temperature-dependent photoluminescence. For the sample with strained-layer thicknesses greater than the critical thicknesses, a high density of pure edge type threading dislocations generated from MQW layers and extended to the cap layer was observed. These dislocations result from a relaxation of the strained layers when their thicknesses are beyond the critical thicknesses. Because of indium outdiffusion from the well layers due to the anneal effect of Mg-doped cap layer growth and defects generated from strain relaxation, the PL emission peak was almost depressed by the broad yellow band with an intensity maximum at 2.28 eV. But for the sample with strained-layer thicknesses less than the critical thicknesses, it has no such phenomenon. The measured critical thicknesses are consistent with the calculated values using the model proposed by Fischer, Kuhne, and Richter. (C) 2004 American Institute of Physics.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/35740]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Song, SF,Chen, WD,Zhu, JJ,et al. Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er[J]. JOURNAL OF CRYSTAL GROWTH,2004,265(1-2):78.
APA	Song, SF,Chen, WD,Zhu, JJ,&Hsu, CC.(2004).Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er.JOURNAL OF CRYSTAL GROWTH,265(1-2),78.
MLA	Song, SF,et al."Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er".JOURNAL OF CRYSTAL GROWTH 265.1-2(2004):78.