Crystal growth of AlN: Effect of SiC substrate

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	Crystal growth of AlN: Effect of SiC substrate
	Zuo, SB ; Chen, XL ; Jiang, LB ; Bao, HQ ; Wang, J ; Guo, LW ; Wang, WJ
刊名	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
	2012
卷号	15 期号:4 页码:401
关键词	BULK ALUMINUM NITRIDE SUBLIMATION GROWTH SINGLE-CRYSTALS NATIVE ALN NUCLEATION MORPHOLOGY EPITAXY
ISSN号	1369-8001
通讯作者	Wang, WJ: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China.
中文摘要	The morphology of AlN crystal grown under the same growth conditions by the PVT method on four kinds of 4H-SiC substrates (SiC (0001), SiC (000 - 1), 8 degrees off-axis SiC (0001), and 8 degrees off-axis SiC (000 - 1), off-oriented from the basal plane toward the < 11-20 > direction) was investigated. It is found that the nucleation more easily occurs on the Si face substrate than on the C face substrate at 1800-1900 degrees C. Hexagonal flakes nucleated on the SiC (0001) substrate, while tetrahedral grains nucleated on the 8 degrees off-axis SiC (0001) substrate. AlN grown on the 8 degrees off-axis SiC (000 - 1) substrate was strikingly different, and flower pattern structure AlN deposited on the substrate. A stepped structure with smooth terraces was obtained on the 8 degrees off-axis SiC (0001) substrate at 1900 degrees C for 4 h. We conclude that the AIM grown on the 8 degrees off-axis SiC (0001) substrate was first by island nucleation then by the step-flow growth mode. (C) 2012 Elsevier Ltd. All rights reserved.
收录类别	SCI
资助信息	National Natural Science Foundation of China [50702073, 51172270]; National Basic Research Program of China (973 Program) [2007CB936300]; National High Technology Research and Development Program of China (863 Program) [2006AA03A107]; Chinese Academy of Sciences
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/35338]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zuo, SB,Chen, XL,Jiang, LB,et al. Crystal growth of AlN: Effect of SiC substrate[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2012,15(4):401.
APA	Zuo, SB.,Chen, XL.,Jiang, LB.,Bao, HQ.,Wang, J.,...&Wang, WJ.(2012).Crystal growth of AlN: Effect of SiC substrate.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,15(4),401.
MLA	Zuo, SB,et al."Crystal growth of AlN: Effect of SiC substrate".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 15.4(2012):401.