Contrasting Spin Dynamics between Underdoped and Overdoped Ba(Fe1-xCox)(2)As-2

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	Contrasting Spin Dynamics between Underdoped and Overdoped Ba(Fe1-xCox)(2)As-2
	Ning, FL ; Ahilan, K ; Imai, T ; Sefat, AS ; McGuire, MA ; Sales, BC ; Mandrus, D ; Cheng, P ; Shen, B ; Wen, HH
刊名	PHYSICAL REVIEW LETTERS
	2010
卷号	104 期号:3
ISSN号	0031-9007
通讯作者	Ning, FL: McMaster Univ, Dept Phys & Astron, Hamilton, ON L8S 4M1, Canada.
中文摘要	Ge1-xMnx/Ge single-crystal heterojunction diodes with p-type Ge1-xMnx ferromagnetic semiconductor were grown, respectively on Ge substrates of p-type, n-type, and intrinsic semiconductors by molecular beam epitaxy. The I-V curve of the p-Ge0.95Mn0.05/intrinsic-Ge diode can be greatly tuned by a magnetic field, which was indicated by a large positive magnetoresistance. The magnetoresistance shows a peak value of 700% under a +2 V bias voltage around the Curie temperature of 225 K of the Ge0.95Mn0.05 magnetic semiconductor, and it remains as high as 440% at room temperature. The origin of the positive magnetoresistance is discussed.
收录类别	SCI
资助信息	NSERC; CFI; CIFAR; U.S. Department of Energy; NSF; Ministry of Science and Technology of China; Chinese Academy of Sciences
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/35083]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Ning, FL,Ahilan, K,Imai, T,et al. Contrasting Spin Dynamics between Underdoped and Overdoped Ba(Fe1-xCox)(2)As-2[J]. PHYSICAL REVIEW LETTERS,2010,104(3).
APA	Ning, FL.,Ahilan, K.,Imai, T.,Sefat, AS.,McGuire, MA.,...&Wen, HH.(2010).Contrasting Spin Dynamics between Underdoped and Overdoped Ba(Fe1-xCox)(2)As-2.PHYSICAL REVIEW LETTERS,104(3).
MLA	Ning, FL,et al."Contrasting Spin Dynamics between Underdoped and Overdoped Ba(Fe1-xCox)(2)As-2".PHYSICAL REVIEW LETTERS 104.3(2010).