Contamination of Si surfaces in ultrahigh vacuum and formation of SiC islands

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	Contamination of Si surfaces in ultrahigh vacuum and formation of SiC islands
	Xie, F ; von Blanckenhagen, P ; Wu, J ; Liu, JW ; Zhang, QZ ; Chen, YC ; Wang, EG
刊名	APPLIED SURFACE SCIENCE
	2001
卷号	181 期号:1-2 页码:139
关键词	SCANNING-TUNNELING-MICROSCOPY EPITAXIAL-GROWTH SI(111) SURFACES VOID FORMATION THIN-FILMS SI(100) SILICON CARBONIZATION OSCILLATIONS NUCLEATION
ISSN号	0169-4332
通讯作者	von Blanckenhagen, P: Forschungszentrum Karlsruhe, Inst Nanotechnol, Postfach 3640, D-76021 Karlsruhe, Germany.
中文摘要	The long-term contamination and carbonization of Si(1 1 1) surfaces in ultrahigh vacuum (UHV) was investigated by high-resolution electron-energy loss spectroscopy (HREELS), Auger electron spectroscopy (AES), and scanning tunneling microscopy (STM). HREELS measurements show that O-2, carbon-containing molecules, H, and OH-containing molecules of the residual gases in UHV gradually absorb on Si surfaces. After 6 days' absorption of residual gases, AES measurements indicate that the coverage of carbon and oxygen on a Si surface increased up to 18 and 12%, respectively. When the surface is covered by residual gases in UHV and then flashed to 1250 degreesC for a few times, islands of SiC are epitaxially grown on the Si(1 1 1)-(7 x 7) surface. Highly oriented SiC islands in the shape of equilateral triangles are observed by STM. The carbonized Si surface in UHV is flat on the atomic scale throughout the whole surface. Carbonization of a Si surface in UHV may be an effective way to form a perfect interface between epitaxial SiC thin films and the Si(I 1 1) substrates. (C) 2001 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/35064]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Xie, F,von Blanckenhagen, P,Wu, J,et al. Contamination of Si surfaces in ultrahigh vacuum and formation of SiC islands[J]. APPLIED SURFACE SCIENCE,2001,181(1-2):139.
APA	Xie, F.,von Blanckenhagen, P.,Wu, J.,Liu, JW.,Zhang, QZ.,...&Wang, EG.(2001).Contamination of Si surfaces in ultrahigh vacuum and formation of SiC islands.APPLIED SURFACE SCIENCE,181(1-2),139.
MLA	Xie, F,et al."Contamination of Si surfaces in ultrahigh vacuum and formation of SiC islands".APPLIED SURFACE SCIENCE 181.1-2(2001):139.