Clean MgB2 thin films on different types single-crystal substrate fabricated by hybrid physical-chemical vapor deposition

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	Clean MgB2 thin films on different types single-crystal substrate fabricated by hybrid physical-chemical vapor deposition
	Zhuang, CG ; Tan, T ; Wang, YZ ; Bai, SS ; Ma, XB ; Yang, H ; Zhang, GH ; He, YS ; Wen, HH ; Xi, XX ; Feng, QR ; Gan, ZZ
刊名	SUPERCONDUCTOR SCIENCE & TECHNOLOGY
	2009
卷号	22 期号:2
关键词	STAINLESS-STEEL SUBSTRATE SUPERCONDUCTIVITY DEPENDENCE PROGRESS
ISSN号	0953-2048
通讯作者	Zhuang, CG: Peking Univ, Sch Phys, Beijing 100871, Peoples R China.
中文摘要	Phase pure and clean MgB2 films have been fabricated on different types of single-crystal substrate, including SiC, sapphire, MgO, LaAlO3, SrTiO3, and yttrium-stabilized ZrO2 (YSZ), via the hybrid physical-chemical vapor deposition (HPCVD) technique. Pure MgB2 films with different structural textures are obtained by selecting the substrate and its orientation, such as off-axis epitaxial MgB2 on MgO(211) or textured MgB2 on YSZ(110) substrates. Films show T-c(0) in the range 37-41 K, and residual resistivity rho(42 K) between 0.3 and 5 mu Omega cm as the substrate and film thickness are varied. The crystal structures and film morphologies are presented and discussed. Further investigations are focused on c-axis epitaxial films. Epitaxial MgB2 films with thickness about 300 nm manifest T-c(0) = 41.2 K and residual resistivity .(42 K) = 0.35 mu Omega cm on SiC(0001) while T-c(0) = 39.5 K and rho(42 K) = 0.27 mu Omega cm on c-cut sapphire, reflecting that the films are of high quality and in the 'clean limit'. Low upper critical field H-c2(parallel to ab)(0) and large anisotropy of the upper critical field gamma comparable to the results from MgB2 single crystals are also revealed. The smooth surface of the epitaxial films, with root-mean-square (RMS) roughness less than 5 nm, makes them well qualified for device applications. Microwave performance measurements are carried out using a coplanar resonator on a 300 nm thick film on sapphire substrate and no power dependence of unloaded quality factor in the output power range of -10-25 dB is found.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/34745]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhuang, CG,Tan, T,Wang, YZ,et al. Clean MgB2 thin films on different types single-crystal substrate fabricated by hybrid physical-chemical vapor deposition[J]. SUPERCONDUCTOR SCIENCE & TECHNOLOGY,2009,22(2).
APA	Zhuang, CG.,Tan, T.,Wang, YZ.,Bai, SS.,Ma, XB.,...&Gan, ZZ.(2009).Clean MgB2 thin films on different types single-crystal substrate fabricated by hybrid physical-chemical vapor deposition.SUPERCONDUCTOR SCIENCE & TECHNOLOGY,22(2).
MLA	Zhuang, CG,et al."Clean MgB2 thin films on different types single-crystal substrate fabricated by hybrid physical-chemical vapor deposition".SUPERCONDUCTOR SCIENCE & TECHNOLOGY 22.2(2009).