Buffer layer-induced positive magnetoresistance in manganite-based heterojunctions

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	Buffer layer-induced positive magnetoresistance in manganite-based heterojunctions
	Gao, WW ; Lu, WM ; Wei, AD ; Wang, J ; Shen, J ; Shen, BG ; Sun, JR
刊名	JOURNAL OF APPLIED PHYSICS
	2012
卷号	111 期号:7
关键词	OXIDES
ISSN号	0021-8979
通讯作者	Sun, JR: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	Effects of the LaMnO3 (LMO) buffer layer on the magnetoresistive behaviors of La(0.67)A(0.33)MnO(3)/LaMnO3/SrTiO3:0.05 wt% Nb (LAMO/LMO/STON, A = Ca, Sr) have been experimentally studied. In addition to an enhanced response to a magnetic field, the current-voltage relations show a downward shift in magnetic field, indicating an increase of the junction resistance. It is completely different from that observed in the junctions without buffer layer. The positive magnetoresistance (MR) is strongly dependent on the thickness of the LMO layer, increasing first then decreasing with the increase of layer thickness. Furthermore, it is significantly stronger in LCMO/LMO/STON than in LSMO/LMO/STON. The maximal MR at 50 K is similar to 90% for LCMO/LMO/STON and similar to 52% for LSMO/LMO/STON, occurring at the LMO thickness of 4 nm under the field of 5 T. The MR persists up to 350 K, and it is similar to 30% and similar to 24% for the LCMO and LSMO junctions, respectively. An analysis of the current-voltage characteristics indicates an increase in interfacial barrier in magnetic field, which is the origin for the positive MR. (C) 2012 American Institute of Physics. [doi:10.1063/1.3673858]
收录类别	SCI
资助信息	National Basic Research of China; National Natural Science Foundation of China; Chinese Academy of Sciences; Beijing Municipal Nature Science Foundation
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/34364]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Gao, WW,Lu, WM,Wei, AD,et al. Buffer layer-induced positive magnetoresistance in manganite-based heterojunctions[J]. JOURNAL OF APPLIED PHYSICS,2012,111(7).
APA	Gao, WW.,Lu, WM.,Wei, AD.,Wang, J.,Shen, J.,...&Sun, JR.(2012).Buffer layer-induced positive magnetoresistance in manganite-based heterojunctions.JOURNAL OF APPLIED PHYSICS,111(7).
MLA	Gao, WW,et al."Buffer layer-induced positive magnetoresistance in manganite-based heterojunctions".JOURNAL OF APPLIED PHYSICS 111.7(2012).