Aligned 1D silicon nanostructure arrays by plasma etching

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	Aligned 1D silicon nanostructure arrays by plasma etching
	Bai, XD ; Xu, Z ; Liu, S ; Wang, EG
刊名	SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
	2005
卷号	6 期号:7 页码:804
关键词	ASSISTED FIELD-EMISSION CARBON NANOTIPS TIP ARRAYS FABRICATION EMITTER PILLARS DEVICE CONES FILM
ISSN号	1468-6996
通讯作者	Wang, EG: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	High-density aligned arrays made of one-dimensional (1D) silicon nanostructures, including nanocone, nanorod, and nanowire, are fabricated by plasma etching in a hot-filament chemical vapor deposition apparatus using the gas mixture of hydrogen, nitrogen and methane. The silicon nanocones are crystalline structure and have a uniform apex angle of about 22 degrees. The cones can be coated in situ with an about 3 nm thick amorphous carbon film by increasing the methane concentration in source gases. With gradually decreasing the plasma intensity, the morphologies of the silicon nanostructures evolve along the nanocone-nanorod-nanowire route, and the nanowire becomes amorphous structure. The model for fabrication process of silicon nanostructures with different morphologies will also be suggested. (c) 2005 Elsevier Ltd. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/33549]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Bai, XD,Xu, Z,Liu, S,et al. Aligned 1D silicon nanostructure arrays by plasma etching[J]. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,2005,6(7):804.
APA	Bai, XD,Xu, Z,Liu, S,&Wang, EG.(2005).Aligned 1D silicon nanostructure arrays by plasma etching.SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,6(7),804.
MLA	Bai, XD,et al."Aligned 1D silicon nanostructure arrays by plasma etching".SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 6.7(2005):804.