A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides

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	A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides
	Xia, FJ ; Wu, H ; Fu, YJ ; Xu, B ; Yuan, J ; Zhu, BY ; Qiu, XG ; Cao, LX ; Li, JJ ; Jin, AZ ; Wang, YM ; Li, FH ; Liu, BT ; Xie, Z ; Zhao, BR
刊名	CHINESE PHYSICS LETTERS
	2012
卷号	29 期号:10
关键词	(BA ELECTRON-GAS N-DIODE METAL MANGANITES THICKNESS INSULATOR CHARGE SR)TIO3 THIN-FILMS
ISSN号	0256-307X
通讯作者	Zhao, BR: Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, Beijing 100190, Peoples R China.
中文摘要	Oxide transistor is the basic device to construct the oxide electronic circuit that is the backing to develop integrated oxide electronics with high efficiency and low power consumption. By growing the perovskite oxide integrated layers and tailoring them to lead semiconducting functions at their interfaces, the development of oxide transistors may be able to perform. We realize a kind of p-i-n type integrated layers consisting of an n-type cuprate superconductor, p-type colossal magnetoresistance manganite, and a ferroelectric barrier ( i). From this, bipolar transistors were fabricated at the back-to-back p-i-n junctions, for which the Schottky emission and p-n junction barriers, as well as the ferroelectric polarization, were integrated into the interfaces to control the transport properties; a preliminary but distinct current gain greater than 1.6 at input current of microampers order was observed. These results present a real possibility to date for developing bipolar all perovskite oxide transistors.
收录类别	SCI
资助信息	Knowledge Innovation Program of the Chinese Academy of Sciences [KJCX2YW-W16]; National Basic Research Program of China [2010CB630700]; National Natural Science Foundation of China [10904116]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/33019]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Xia, FJ,Wu, H,Fu, YJ,et al. A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides[J]. CHINESE PHYSICS LETTERS,2012,29(10).
APA	Xia, FJ.,Wu, H.,Fu, YJ.,Xu, B.,Yuan, J.,...&Zhao, BR.(2012).A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides.CHINESE PHYSICS LETTERS,29(10).
MLA	Xia, FJ,et al."A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides".CHINESE PHYSICS LETTERS 29.10(2012).