Experimental study on residual stress in titanium alloy laser additive manufacturing

CORC > 沈阳自动化研究所 > 中国科学院沈阳自动化研究所 > 装备制造技术研究室

	Experimental study on residual stress in titanium alloy laser additive manufacturing
	Lai YB(来佑彬); Liu WJ(刘伟军); Zhao JB(赵吉宾); Zhao YH(赵宇辉); Wang FY(王福雨); Han WC(韩文超)
	2013
会议名称	2013 International Conference on Mechanical Engineering, Industrial Materials and Industrial Electronics, MII 2013
会议日期	September 1-2, 2013
会议地点	Hong Kong, China
关键词	Industrial electronics Manufacture Mechanical engineering Scanning Stress measurement Titanium alloys
页码	20-26
中文摘要	The residual stress in laser additive manufacturing titanium alloy sample was measured using indentation stress measurement method. The residual stress variation formulas was fitted with the major process parameters such as laser power, scanning speed, the powder feed rate etc. It was studied that the influence of processing layers and scanning corner on the specimen residual stress. The results show that the specimen residual stress increases first and then decreases with the increase of processing layers, and the maximum appears in the fiftieth layer, in addition, the residual stress in the side of corner sample is mainly pressure stress, the maximum appearing in the 150°scanning angle, the minimum appearing in the 120°scanning angle. Therefore, it can reduce the overall sample residual stress effectively by an obtuse angle scanning trajectory. © (2013) Trans Tech Publications, Switzerland.
收录类别	EI
产权排序	1
会议主办者	Information Engineering Research Institute, USA; Trans Tech Publications inc.
会议录	Applied Mechanics and Materials
会议录出版者	Trans Tech Publications Ltd,
会议录出版地	Zurich-Durnten, Switzerland
语种	英语
ISSN号	1660-9336
ISBN号	978-3-03785-893-6
内容类型	会议论文
源URL	[http://ir.sia.cn/handle/173321/13829]
专题	沈阳自动化研究所_装备制造技术研究室
推荐引用方式 GB/T 7714	Lai YB,Liu WJ,Zhao JB,et al. Experimental study on residual stress in titanium alloy laser additive manufacturing[C]. 见:2013 International Conference on Mechanical Engineering, Industrial Materials and Industrial Electronics, MII 2013. Hong Kong, China. September 1-2, 2013.