Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 宁波所知识产出

	Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films
	Song WJ(宋伟杰) ; Junjun Huanga, Yuheng Zenga, Ruiqin Tanb, Weiyan Wanga, Ye Yanga, Ning Daia, Weijie Songa,∗
刊名	Applied Surface Science
	2013-04-01
期号	1 页码:428—431
通讯作者	宋伟杰
合作状况	李雨桐
中文摘要	In this work, silicon-rich SiO2 (SRSO) thin films were deposited at different substrate temperatures (Ts) and then annealed by rapid thermal annealing to form SiO2-matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of Ts on the micro-structure and electrical properties of the SiO2-matrix borondoped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO2-matrix boron-doped Si-NC thin films both increased significantly when the Ts was increased from room temperature to 373 K. When the Ts was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 × 10？3 S/cm to 5.5 × 10？5 S/cm. The changes in micro-structure and dark conductivity of the SiO2-matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si O4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal Ts, which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO2-matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, Ts.
学科主题	物理化学
原文出处	SCI收录
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9869]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Song WJ,Junjun Huanga, Yuheng Zenga, Ruiqin Tanb, Weiyan Wanga, Ye Yanga, Ning Daia, Weijie Songa,∗. Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films[J]. Applied Surface Science,2013(1):428—431.
APA	Song WJ,&Junjun Huanga, Yuheng Zenga, Ruiqin Tanb, Weiyan Wanga, Ye Yanga, Ning Daia, Weijie Songa,∗.(2013).Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films.Applied Surface Science(1),428—431.
MLA	Song WJ,et al."Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films".Applied Surface Science .1(2013):428—431.