Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

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	Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors
	Wan Q(万青) ; Hongliang Zhang, Qing Wan,a) Changjin Wan, Guodong Wu, and Liqiang Zhu
刊名	APPLIED PHYSICS LETTERS
	2013-02-06
期号	102 页码:052905-1—052905-4
通讯作者	万青
合作状况	李雨桐
中文摘要	Tungsten oxide (WOx) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 10 4 S/cm with a relative humidity of 60%. Lowvoltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WOx-based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 106, a low subthreshold swing of 108mV/decade, and a high field-effect mobility 42.6 cm2/V s was realized. Our results demonstrated that WOx-based proton conducting films were promising gate dielectric candidates for portable low-voltage oxidebased devices.
学科主题	物理化学
原文出处	SCI收录
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9804]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Wan Q,Hongliang Zhang, Qing Wan,a) Changjin Wan, Guodong Wu, and Liqiang Zhu. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors[J]. APPLIED PHYSICS LETTERS,2013(102):052905-1—052905-4.
APA	Wan Q,&Hongliang Zhang, Qing Wan,a) Changjin Wan, Guodong Wu, and Liqiang Zhu.(2013).Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors.APPLIED PHYSICS LETTERS(102),052905-1—052905-4.
MLA	Wan Q,et al."Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors".APPLIED PHYSICS LETTERS .102(2013):052905-1—052905-4.