Influence of the substrate bias voltage on the physical properties of dcreactive sputtered Ta2O5 films
曹鸿涛、邹友生 ; K. Cang a,b, L.Y. Liang b, Z.M. Liu b, L. Wub, H. Luo b, H.T. Cao b,⇑, Y.S. Zou a,⇑
刊名Journal of Alloys and Compounds
2012-10-05
期号550页码:258—262
通讯作者曹鸿涛、邹友生
合作状况李雨桐
中文摘要Tantalum oxide (Ta2O5) films were deposited on ITO glass substrates by dc reactive magnetron sputtering in oxygen/argon gas mixture. The performance of Ta2O5 films deposited at different substrate bias voltages in the range from 0 to 145 V was investigated in detail. Our results show a decrease both in the film porosity and the surface roughness as the substrate bias voltage changes within a certain scope, which interestingly leads to a conspicuous improvement of their electrical properties. Further increasing of the negative bias voltage, however, results in deterioration of the film packing density, surface morphologyand leakage current as well. Under the optimal substrate biasing condition ( 135 V), the Ta2O5 films exhibit attractive electrical properties, namely a permittivity value as high as 23, a dielectric loss of 0.01, and a leakage current density as low as 1.45 10 7 A/cm2 at 1 MV/cm.
学科主题材料科学
原文出处SCI收录
公开日期2013-12-16
内容类型期刊论文
源URL[http://ir.nimte.ac.cn/handle/174433/9714]  
专题宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式
GB/T 7714
曹鸿涛、邹友生,K. Cang a,b, L.Y. Liang b, Z.M. Liu b, L. Wub, H. Luo b, H.T. Cao b,⇑, Y.S. Zou a,⇑. Influence of the substrate bias voltage on the physical properties of dcreactive sputtered Ta2O5 films[J]. Journal of Alloys and Compounds,2012(550):258—262.
APA 曹鸿涛、邹友生,&K. Cang a,b, L.Y. Liang b, Z.M. Liu b, L. Wub, H. Luo b, H.T. Cao b,⇑, Y.S. Zou a,⇑.(2012).Influence of the substrate bias voltage on the physical properties of dcreactive sputtered Ta2O5 films.Journal of Alloys and Compounds(550),258—262.
MLA 曹鸿涛、邹友生,et al."Influence of the substrate bias voltage on the physical properties of dcreactive sputtered Ta2O5 films".Journal of Alloys and Compounds .550(2012):258—262.
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