Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked SiO2 Electrolyte/Chitosan Hybrid Dielectrics

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	Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked SiO2 Electrolyte/Chitosan Hybrid Dielectrics
	Wan Q(万青) ; Wei Dou, Jie Jiang, Jia Sun, Bin Zhou, and Qing Wan
刊名	IEEE ELECTRON DEVICE LETTERS
	2012-04-18
期号	6 页码:848—850
通讯作者	万青
合作状况	李雨桐
中文摘要	Low-voltage oxide-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by stacked SiO2 electrolyte/chitosan proton-conductor hybrid dielectric have been fabricated on glass substrates at room temperature. Such EDL TFTs exhibit a saturation mobility (μsat) of 7.8 cm2 · V？1 · s？1, a subthreshold swing (S) of 100 mV/decade, a drain current ON/OFF ratio (Ion/off ) of 7.8 × 105, and a threshold voltage (Vth) of ？0.48 V. After aging for one month in air ambient without surface passivation, such device shows μsat of 3.5 cm2 · V？1 · s？1, Ion/off of 1.2 × 105, and S of 120 mV/decade. Control experiments demonstrate that devices gated by stacked SiO2 electrolyte/chitosan hybrid dielectrics show improved stability compared with TFTs gated by single chitosan or single SiO2 electrolyte gate dielectric.
学科主题	物理化学
原文出处	SCI收录
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9604]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Wan Q,Wei Dou, Jie Jiang, Jia Sun, Bin Zhou, and Qing Wan. Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked SiO2 Electrolyte/Chitosan Hybrid Dielectrics[J]. IEEE ELECTRON DEVICE LETTERS,2012(6):848—850.
APA	Wan Q,&Wei Dou, Jie Jiang, Jia Sun, Bin Zhou, and Qing Wan.(2012).Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked SiO2 Electrolyte/Chitosan Hybrid Dielectrics.IEEE ELECTRON DEVICE LETTERS(6),848—850.
MLA	Wan Q,et al."Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked SiO2 Electrolyte/Chitosan Hybrid Dielectrics".IEEE ELECTRON DEVICE LETTERS .6(2012):848—850.