In-Plane-Gate Oxide-Based Thin-Film Transistors Self-Aligned on Stacked Self-Assembled Monolayer/SiO2 Electrolyte Dielectrics

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	In-Plane-Gate Oxide-Based Thin-Film Transistors Self-Aligned on Stacked Self-Assembled Monolayer/SiO2 Electrolyte Dielectrics
	Wan Q(万青) ; Guodong Wu, Hongliang Zhang, Liqiang Zhu, Mingzhi Dai, Ping Cui, and Qing Wan
刊名	IEEE ELECTRON DEVICE LETTERS
	2012-03-23
卷号	3 期号:4 页码:531—533
通讯作者	万青
合作状况	李雨桐
中文摘要	Low-voltage oxide-based thin-film transistors (TFTs) gated by stacked self-assembled octadecylphonic acid (ODPA) monolayer/SiO2 electrolyte with an in-plane-gate structure are self-aligned by one nickel shadow mask at room temperature. The stacked gate dielectrics show a reduced gate leakage current with the aid of the well-organized dense-stacked ODPA monolayer buffer. The equivalent field-effect mobility, subthreshold voltage swing, and drain current on/off ratio of such TFTs are estimated to be 11 cm2/V · s, 140 mV/dec, and 106, respectively. Such low-voltage in-plane-gate TFTs are very promising for low-cost portable sensors.
学科主题	物理化学
原文出处	EI收录
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9589]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Wan Q,Guodong Wu, Hongliang Zhang, Liqiang Zhu, Mingzhi Dai, Ping Cui, and Qing Wan. In-Plane-Gate Oxide-Based Thin-Film Transistors Self-Aligned on Stacked Self-Assembled Monolayer/SiO2 Electrolyte Dielectrics[J]. IEEE ELECTRON DEVICE LETTERS,2012,3(4):531—533.
APA	Wan Q,&Guodong Wu, Hongliang Zhang, Liqiang Zhu, Mingzhi Dai, Ping Cui, and Qing Wan.(2012).In-Plane-Gate Oxide-Based Thin-Film Transistors Self-Aligned on Stacked Self-Assembled Monolayer/SiO2 Electrolyte Dielectrics.IEEE ELECTRON DEVICE LETTERS,3(4),531—533.
MLA	Wan Q,et al."In-Plane-Gate Oxide-Based Thin-Film Transistors Self-Aligned on Stacked Self-Assembled Monolayer/SiO2 Electrolyte Dielectrics".IEEE ELECTRON DEVICE LETTERS 3.4(2012):531—533.