A novel method for widely tunable semiconductor lasers: Temperature-induced gain spectrum shift between adjacent grating reflection peaks

doi:10.1016/j.jlumin.2022.118998

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	A novel method for widely tunable semiconductor lasers: Temperature-induced gain spectrum shift between adjacent grating reflection peaks
	Y. L. Zhou; X. Zhang; J. W. Zhang; Y. Q. Ning; Y. G. Zeng and L. J. Wang
刊名	Journal of Luminescence
	2022
卷号	248 页码:5
ISSN号	0022-2313
DOI	10.1016/j.jlumin.2022.118998
英文摘要	We report a slotted high-order surface grating semiconductor laser without a multi-section design. A wide tuning range of 20 nm with side mode suppression ratios (SMSRs) larger than 30 dB is realized by controlling the temperature and the injection current. With a temperature variation of 30 degrees C, the wavelength tuning range is larger than 10 nm, in contrast to ~3 nm for thermo-optic tuning range in other grating-based lasers. By analyzing the gain and the reflection spectrum of the device, we attribute this wide tuning range to the movement of the temperature-induced gain spectrum between the two adjacent Bragg reflection peaks of high-order surface gratings. This is a new method to realize the wide wavelength tuning range.
URL标识	查看原文
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/66915]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y. L. Zhou,X. Zhang,J. W. Zhang,et al. A novel method for widely tunable semiconductor lasers: Temperature-induced gain spectrum shift between adjacent grating reflection peaks[J]. Journal of Luminescence,2022,248:5.
APA	Y. L. Zhou,X. Zhang,J. W. Zhang,Y. Q. Ning,&Y. G. Zeng and L. J. Wang.(2022).A novel method for widely tunable semiconductor lasers: Temperature-induced gain spectrum shift between adjacent grating reflection peaks.Journal of Luminescence,248,5.
MLA	Y. L. Zhou,et al."A novel method for widely tunable semiconductor lasers: Temperature-induced gain spectrum shift between adjacent grating reflection peaks".Journal of Luminescence 248(2022):5.