Epitaxial Growth of Bi2Se3 Infrared Transparent Conductive Film and Heterojunction Diode by Molecular Beam Epitaxy

doi:10.3389/fchem.2022.847972

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	Epitaxial Growth of Bi2Se3 Infrared Transparent Conductive Film and Heterojunction Diode by Molecular Beam Epitaxy
	Y. H. Chuai; C. Zhu; D. Yue and Y. Bai
刊名	Frontiers in Chemistry
	2022
卷号	10 页码:8
ISSN号	2296-2646
DOI	10.3389/fchem.2022.847972
英文摘要	Epitaxial n-type infrared transparent conductive Bi2Se3 thin film was cultivated by molecular beam epitaxy (MBE) method on Al2O3 (001) substrate. The orientation between Bi2Se3 and the substrate is Bi2Se3(001)//Al2O3(1 2 over bar 10). Conducting mechanism ensued the small-polaron hopping mechanism, with an activation energy of 34 meV. The film demonstrates conductivity of n-type, and the resistivity is 7 x 10(-4) omega cm at room temperature. The Film exhibits an excellent carrier mobility of 1,015 cm(2)/Vs at room temperature and retains optical transparency in the near-infrared (> 70%) and far-infrared (> 85%) ranges. To the best of our knowledge, the Bi2Se3 film yields the best result in the realm of n-type Infrared transparent conductive thin films generated through either physical or chemical methods. To demonstrate the application of such films, we produced N-Bi2Se3/P-CuScO2 heterojunction diode device, the & SIM;3.3 V threshold voltage of which conformed fairly well with the CuScO2 bandgap value. The high optical transparency and conductivity of Bi2Se3 film make it very promising for optoelectronic applications, where a wide wavelength range from near-infrared to far-infrared is required.
URL标识	查看原文
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/66632]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y. H. Chuai,C. Zhu,D. Yue and Y. Bai. Epitaxial Growth of Bi2Se3 Infrared Transparent Conductive Film and Heterojunction Diode by Molecular Beam Epitaxy[J]. Frontiers in Chemistry,2022,10:8.
APA	Y. H. Chuai,C. Zhu,&D. Yue and Y. Bai.(2022).Epitaxial Growth of Bi2Se3 Infrared Transparent Conductive Film and Heterojunction Diode by Molecular Beam Epitaxy.Frontiers in Chemistry,10,8.
MLA	Y. H. Chuai,et al."Epitaxial Growth of Bi2Se3 Infrared Transparent Conductive Film and Heterojunction Diode by Molecular Beam Epitaxy".Frontiers in Chemistry 10(2022):8.