An ultra-high gain single-photon transistor in the microwave regime

	An ultra-high gain single-photon transistor in the microwave regime
	Zhiling Wang 1; Zenghui Bao 1; Yan Li 1; Yukai Wu 1; Weizhou Cai 1; Weiting Wang 1; Xiyue Han 1; Jiahui Wang 1; Yipu Song 1; Luyan Sun 1
刊名	Nature Communications
卷号	13
ISSN号	2041-1723
英文摘要	A photonic transistor that can switch or amplify an optical signal with a single gate photon requires strong non-linear interaction at the single-photon level. Circuit quantum electrodynamics provides great flexibility to generate such an interaction, and thus could serve as an effective platform to realize a high-performance single-photon transistor. Here we demonstrate such a photonic transistor in the microwave regime. Our device consists of two microwave cavities dispersively coupled to a superconducting qubit. A single gate photon imprints a phase shift on the qubit state through one cavity, and further shifts the resonance frequency of the other cavity. In this way, we realize a gain of the transistor up to 53.4 dB, with an extinction ratio better than 20 dB. Our device outperforms previous devices in the optical regime by several orders in terms of optical gain, which indicates a great potential for application in the field of microwave quantum photonics and quantum information processing.
语种	英语
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/128915]
专题	中国科学院合肥物质科学研究院
作者单位	1.清华大学 2.中国科学院合肥物质科学研究院
推荐引用方式 GB/T 7714	Zhiling Wang,Zenghui Bao,Yan Li,et al. An ultra-high gain single-photon transistor in the microwave regime[J]. Nature Communications,13.
APA	Zhiling Wang.,Zenghui Bao.,Yan Li.,Yukai Wu.,Weizhou Cai.,...&Luming Duan.
MLA	Zhiling Wang,et al."An ultra-high gain single-photon transistor in the microwave regime".Nature Communications 13