Recrystallization Phase in He-Implanted 6H-SiC

doi:10.1088/0256-307X/34/7/076101

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	Recrystallization Phase in He-Implanted 6H-SiC
	Liu, Yu-Zhu 1; Li, Bing-Sheng 2; Lin, Hua 1; Zhang, Li 3
刊名	CHINESE PHYSICS LETTERS
	2017-06
卷号	34 期号:7
ISSN号	0256-307X
DOI	10.1088/0256-307X/34/7/076101
英文摘要	The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of recrystallized layers in 15 keV He+ ion implanted 6H-SiC (0001) wafers are characterized by means of cross-sectional transmission electron microscopy (XTEM) and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900 degrees C. The recrystallization region contains a 3C-SiC structure and a 6H-SiC structure with different crystalline orientations. A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles. With increasing annealing to 1000 degrees C, 3C-SiC and columnar epitaxial growth 6H-SiC become unstable, instead of [0001] orientated 6H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing. The possible mechanisms for explanation are also discussed.
资助项目	College Students Practice Innovative Training Program of Nanjing University of Information Science Technology[201610300042]
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000410696400037
状态	已发表
内容类型	期刊论文
源URL	[http://119.78.100.223/handle/2XXMBERH/33261]
专题	理学院
通讯作者	Li, Bing-Sheng
作者单位	1.Nanjing Univ Informat Sci & Technol, Jiangsu Collaborat Innovat Ctr Atmospher Environm, Nanjing 210044, Jiangsu, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Lanzhou Univ Technol, Sch Sci, Dept Phys, Lanzhou 730050, Gansu, Peoples R China
推荐引用方式 GB/T 7714	Liu, Yu-Zhu,Li, Bing-Sheng,Lin, Hua,et al. Recrystallization Phase in He-Implanted 6H-SiC[J]. CHINESE PHYSICS LETTERS,2017,34(7).
APA	Liu, Yu-Zhu,Li, Bing-Sheng,Lin, Hua,&Zhang, Li.(2017).Recrystallization Phase in He-Implanted 6H-SiC.CHINESE PHYSICS LETTERS,34(7).
MLA	Liu, Yu-Zhu,et al."Recrystallization Phase in He-Implanted 6H-SiC".CHINESE PHYSICS LETTERS 34.7(2017).