Boosting nonradical process in BiOI/BiOCl heterostructure by interface oxygen vacancies

doi:10.1016/j.cej.2022.134847

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	Boosting nonradical process in BiOI/BiOCl heterostructure by interface oxygen vacancies
	Qin, Hailan 2; Sun, Jingyu 2; Xia, Dongsheng 3; Xu, Haiming 2; Yu, Qilin 1; Zheng, Yi 4; Shi, Yintao 2
刊名	Chemical Engineering Journal
	2022-05-01
卷号	435
关键词	Bismuth compounds Chlorine compounds Defect engineering Heterojunctions Water pollution BiOI/BiOCl Electrophilicities Interface oxygen vacancy Nonradical Oxygen vacancy concentration Photo-induced Selective degradation Synthesised Transport resistance Ultrasonic methods
ISSN号	1385-8947
DOI	10.1016/j.cej.2022.134847
英文摘要	Boosting nonradical (1O2, e− and h+) process to enhance the selective degradation for electrophilicity contaminants is an ingenious strategy. Herein, BiOI/BiOCl heterojunction with rational interface oxygen vacancies (IOVs) concentration was successfully synthesized by ultrasonic method. Moreover, multi-characterization and interference experimental unveiled that the appropriate IOVs concentration can not only effectively reduce the transport resistance of photo-induced carriers but also boost the nonradical process. Thus, BOC-5 can remove 84% (20 mg/L) tetracycline hydrochloride (TC-HCl) in 1 h and present wonderful insecticidal performance for rotifers. Simultaneously, the quantitative methods of IOVs concentration, the contribution of the active species to the catalytic performance and the contribution of different 1O2 source to the total 1O2 were established for the first time. Furthermore, the structure–activity relationship between the IOVs concentration and the catalytic properties was firstly constructed. This work provides an inventive idea to purify water pollutants and disinfestation by boost nonradical process via interface defect engineering. © 2022
WOS研究方向	Engineering
语种	英语
出版者	Elsevier B.V.
WOS记录号	WOS:000774914800002
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/157899]
专题	石油化工学院
作者单位	1.Key Laboratory of Molecular Microbiology and Technology, Ministry of Education, Department of Microbiology, College of Life Sciences, Nankai University, Tianjin; 300071, China; 2.School of Environmental Engineering, Wuhan Textile University, Wuhan; 430200, China; 3.Engineering Research Center Clean Production of Textile Dyeing and Printing, Ministry of Education, Wuhan; 430200, China; 4.School of Petrochemical Technology, Lanzhou University of Technology, Lanzhou; 730050, China
推荐引用方式 GB/T 7714	Qin, Hailan,Sun, Jingyu,Xia, Dongsheng,et al. Boosting nonradical process in BiOI/BiOCl heterostructure by interface oxygen vacancies[J]. Chemical Engineering Journal,2022,435.
APA	Qin, Hailan.,Sun, Jingyu.,Xia, Dongsheng.,Xu, Haiming.,Yu, Qilin.,...&Shi, Yintao.(2022).Boosting nonradical process in BiOI/BiOCl heterostructure by interface oxygen vacancies.Chemical Engineering Journal,435.
MLA	Qin, Hailan,et al."Boosting nonradical process in BiOI/BiOCl heterostructure by interface oxygen vacancies".Chemical Engineering Journal 435(2022).