Investigation of effects of pattern structures arrangement on chemical mechanical polishing process

doi:10.1109/CSTIC.2018.8369259

CORC > 兰州理工大学 > 兰州理工大学 > 机电工程学院

	Investigation of effects of pattern structures arrangement on chemical mechanical polishing process
	Wu, Lixiao 2; Hahn, Sookap 1; Yan, Changfeng 2
	2018-05-29
会议日期	March 11, 2018 - March 12, 2018
会议地点	Shanghai, China
关键词	Chemical mechanical polishing Pressure distribution Semiconductor device manufacture Signal processing Silicon wafers Textile printing Chemical-mechanical polishing process Contact pressure distribution Pattern arrangement Pattern structure Polishing processs Splitting signals
DOI	10.1109/CSTIC.2018.8369259
页码	1-3
英文摘要	Different pattern arrangement will have different wafer profile after CMP. In order to get a planar wafer, the influence of the pattern structure arrangement on the polishing process and on the final wafer profile needs to be investigated. In this paper, CMP-29 of SKW Associates is taken as an example. The initial profile of CMP-29 is divided into three signals and three areas. By using wavelet analysis, the influence of the initial profile on the contact pressure distribution of the different areas is analyzed. The interaction between the splitting signals and the areas during one-material polishing is given. © 2018 IEEE.
会议录	China Semiconductor Technology International Conference 2018, CSTIC 2018
会议录出版者	Institute of Electrical and Electronics Engineers Inc.
语种	英语
内容类型	会议论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/118084]
专题	机电工程学院
作者单位	1.SKW Associates, Santa Clara; CA; 95054, United States 2.School of Mechanical and Electronical Engineering, Lanzhou University of Technology, Lanzhou; 730050, China;
推荐引用方式 GB/T 7714	Wu, Lixiao,Hahn, Sookap,Yan, Changfeng. Investigation of effects of pattern structures arrangement on chemical mechanical polishing process[C]. 见:. Shanghai, China. March 11, 2018 - March 12, 2018.