Simulation of Discharge Characteristics for the Plasma Etching of Large Area SiO2 Substrates

doi:10.1007/s10946-020-09873-x

	Simulation of Discharge Characteristics for the Plasma Etching of Large Area SiO2 Substrates
	Zhang JW(张景文)
刊名	JOURNAL OF RUSSIAN LASER RESEARCH
	2020-05-31
卷号	41 期号:3 页码:258-267
关键词	reactive ion etching capacitive coupled discharge fluid simulation discharge parameter large area SiO2 substrates plasma radial uniformity
ISSN号	1071-2836
DOI	10.1007/s10946-020-09873-x
英文摘要	The electron density distribution and average electron temperature distribution in reactive ion etching (RIE) chamber are of great significance for the ionization and excitation reaction rate. The uniformity of radial distributions of the electron density and average electron temperature in the discharge chamber greatly affects the uniformity of the etching, especially the plasma etching of large area SiO2 substrates. We study the effects of discharge conditions (including power and pressure) on the electron density and average electron temperature of plasma-etched 400 mm SiO2 substrates in the reactive ion etching chamber; the simulation results show that the allowable major discharge conditions strongly affect the characteristics of plasma in the large area reactive ion etching chamber. Specifically, with increase in the power both the electron density and average electron temperature increase, being accompanied by deteriorating uniformity of their radial distributions. As the pressure increases, the electron density increases but average electron temperature decreases, being accompanied by deteriorating uniformity of their radial distributions. These methods and conclusions can provide reference for the improvement of cavity structure and large area RIE equipment designing and selection of the process parameters.
WOS研究方向	Optics
语种	英语
出版者	SPRINGER
WOS记录号	WOS:000536440500009
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/118450]
专题	能源与动力工程学院
作者单位	1.4College of Energy and Power Engineering, Lanzhou University of Technology 2.University of Chinese Academy of Sciences 3.School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China 4.Institute of Optics and Electronics
推荐引用方式 GB/T 7714	Zhang JW. Simulation of Discharge Characteristics for the Plasma Etching of Large Area SiO2 Substrates[J]. JOURNAL OF RUSSIAN LASER RESEARCH,2020,41(3):258-267.
APA	Zhang JW.(2020).Simulation of Discharge Characteristics for the Plasma Etching of Large Area SiO2 Substrates.JOURNAL OF RUSSIAN LASER RESEARCH,41(3),258-267.
MLA	Zhang JW."Simulation of Discharge Characteristics for the Plasma Etching of Large Area SiO2 Substrates".JOURNAL OF RUSSIAN LASER RESEARCH 41.3(2020):258-267.