Flexoelectricity-induced retention failure in ferroelectric films

doi:10.1016/j.actamat.2020.06.037

	Flexoelectricity-induced retention failure in ferroelectric films
	Zou, M.J.2,3; Tang, Y.L.2; Zhu, Y.L.2; Wang, Y.J.2; Feng, Y.P.2,4; Han, M.J.2,4; Zhang, N.B.2,3; Ma, J.Y.1,2,3; Geng, W.R.2,3; Hu, W.T.2,3
	2020-09-01
关键词	Atoms Ferroelectricity High resolution transmission electron microscopy Polarization Scanning electron microscopy StrainAntiphase domains Experimental evidence Ferroelectric domains Ferroelectric memory Piezoelectric force microscopy Reciprocal space mapping Retention properties Scanning transmission electron microscopy
卷号	196
DOI	10.1016/j.actamat.2020.06.037
页码	61-68
英文摘要	Retention failure is deleterious on ferroelectric domain stability, resulting in data loss in ferroelectric memories. However, the understanding of the origin of retention failure remains a challenge for the lack of a direct experimental evidence. Here, using a combination of piezoelectric force microscopy, atomic-scale scanning transmission electron microscopy and reciprocal space mapping, we report that the polarization retention failure is caused by a strain gradient induced flexoelectric field in tetragonal ferroelectric films. Atomic imaging reveals that the strain gradient is introduced by tensile strains, which is resultant from the vertically distributed Pb-rich anti-phase domains. This strain gradient couples with polarizations and results in flexoelectric fields in the films, leading to the retention failure in the films. Our study directly underlines the atomic mechanisms behind the strain gradient induced macroscopic retention failure behavior and clarifies the effect of local strain state on domain relaxation processes, thus can shed light on further understanding and improving the retention properties of oxide ferroelectrics. © 2020 Acta Materialia Inc.
会议录	Acta Materialia
会议录出版者	Acta Materialia Inc
语种	英语
ISSN号	13596454
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000557651000007
内容类型	会议论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/132665]
专题	材料科学与工程学院
作者单位	1.State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals, Lanzhou University of Technology, Langongping Road 287, Lanzhou; 730050, China 2.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang; 110016, China; 3.School of Material Science and Engineering, University of Science and Technology of China, Hefei; 230026, China; 4.University of Chinese Academy of Sciences, Yuquan Road 19, Beijing; 100049, China;
推荐引用方式 GB/T 7714	Zou, M.J.,Tang, Y.L.,Zhu, Y.L.,et al. Flexoelectricity-induced retention failure in ferroelectric films[C]. 见:.