Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

doi:10.1039/c7tc03481d

	Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites
	Chen, Guilin 1; Zhang, Peng 1; Pan, Lulu 1; Qi, Lin 1; Yu, Fucheng 2; Gao, Cunxu 1,3
刊名	JOURNAL OF MATERIALS CHEMISTRY C
	2017-10-07
卷号	5 期号:37 页码:9799-9805
关键词	Aliphatic compounds Ethylene Ethylene glycol Nanocomposite films Nanosheets Organic solvents Plastic bottles Strontium titanates
ISSN号	2050-7526
DOI	10.1039/c7tc03481d
英文摘要	Strontium titanate (SrTiO3) ultra-thin-nanosheets with an average thickness of 3.1 +/- 0.2 nm have been synthesized via a solvothermal reaction route with ethylene glycol as the reaction medium solvent. The as-prepared SrTiO3 nanosheet and polyvinylpyrrolidone (PVP) (SrTiO3-PVP) composites were formed into large-scale high-integrity thin films on polyethylene terephthalate (PET) by using a spin-coating method. A flexible memory device with the configuration of Ag/SrTiO3-PVP/Pt/PET was fabricated and it showed a promising write-once read-many times memory effect with a high ON/OFF current ratio of more than 1.0 x 10(3), an ultralow switching voltage (0.17 V), good stability, good repeatability and flexibility. SrTiO3 nanosheets acting as trapping centers in the device play a significant role in the resistive switching mechanisms. We hope that the benefits of ultralow switching voltage and flexible characteristics will make this material promising for next generation nonvolatile functional memory applications.
资助项目	State Key Laboratory on Integrated Optoelectronics[IOSKL2014KF01]
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	ROYAL SOC CHEMISTRY
WOS记录号	WOS:000412069100034
状态	已发表
内容类型	期刊论文
源URL	[http://119.78.100.223/handle/2XXMBERH/33061]
专题	材料科学与工程学院
通讯作者	Zhang, Peng; Gao, Cunxu
作者单位	1.Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Gansu, Peoples R China 2.Lanzhou Univ Technol, Sch Mat Sci & Engn, Lanzhou, Gansu, Peoples R China 3.Lanzhou Univ, Key Lab Special Funct Mat & Struct Design, Minist Educ, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式 GB/T 7714	Chen, Guilin,Zhang, Peng,Pan, Lulu,et al. Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites[J]. JOURNAL OF MATERIALS CHEMISTRY C,2017,5(37):9799-9805.
APA	Chen, Guilin,Zhang, Peng,Pan, Lulu,Qi, Lin,Yu, Fucheng,&Gao, Cunxu.(2017).Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.JOURNAL OF MATERIALS CHEMISTRY C,5(37),9799-9805.
MLA	Chen, Guilin,et al."Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites".JOURNAL OF MATERIALS CHEMISTRY C 5.37(2017):9799-9805.