Growth of β-Ga2O3 nanoparticles doped with Tin by Ni2+ catalyzed chemical vapor deposition

doi:10.4028/www.scientific.net/AMR.873.200

CORC > 兰州理工大学 > 兰州理工大学

	Growth of β-Ga2O3 nanoparticles doped with Tin by Ni2+ catalyzed chemical vapor deposition
	Shi, Feng; Gu, Yu Fen; Li, Cui Xia
	2014
会议日期	August 23, 2013 - August 26, 2013
会议地点	Harbin, China
关键词	Chemical vapor deposition Crystal structure Fourier transform infrared spectroscopy Functional materials Gallium Nanoparticles Oxygen vacancies Photoluminescence Scanning electron microscopy Tin Vapors X ray diffraction Emission bands Fourier transform infra reds FT-IR spectrum Gallium oxides Growth mechanisms Photoluminescence spectrum Si(111) substrate Sn-doping
卷号	873
DOI	10.4028/www.scientific.net/AMR.873.200
页码	200-205
英文摘要	Sn-doped monoclinic β-Ga2O3 nanoparticles were successfully fabricated on Si(111) substrates with NiCl2 as a catalyst by chemical vapor deposition using metallic gallium and oxygen as sources. The composition, crystal structure, morphology, and optical properties were characterized by X-ray diffraction, scanning electron microscopy, Fourier-transform infrared spectrophotometry (FTIR), and photoluminescence, respectively. The results demonstrate that the sample was monoclinic β-Ga2O3 nanoparticles with diameters approximately ranging from 200~300 nm. Well-defined prominent absorption bands located at 458 and 671 cm-1 in the FTIR spectra corresponded to Ga-O vibrations. The photoluminescence spectrum shows that the Ga2O3 nanoparticles have a broad and strong emission band ranging from 300 nm to 650 nm with four Gaussian bands centered at approximately 346 (UV), 416 (blue), 473 (dark blue), and 529 nm (green), which may be attributed to defects such as oxygen vacancies and gallium-oxygen vacancy pairs. The growth mechanism of β-Ga2O3 nanoparticles is discussed in brief. © (2014) Trans Tech Publications, Switzerland.
会议录	Advanced Materials Research
会议录出版者	Trans Tech Publications Ltd, Kreuzstrasse 10, Zurich-Durnten, CH-8635, Switzerland
语种	英语
ISSN号	10226680
内容类型	会议论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/117301]
专题	兰州理工大学材料科学与工程学院
作者单位	School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050, China
推荐引用方式 GB/T 7714	Shi, Feng,Gu, Yu Fen,Li, Cui Xia. Growth of β-Ga2O3 nanoparticles doped with Tin by Ni2+ catalyzed chemical vapor deposition[C]. 见:. Harbin, China. August 23, 2013 - August 26, 2013.