Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 新疆维吾尔自治区电子信息材料与器件重点实验室

	Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors
	Xi Shan-Bin; Lu Wu; Ren Di-Yuan; Zhou Dong; Wen Lin; Sun Jing; Wu Xue
刊名	ACTA PHYSICA SINICA
	2012
卷号	61 期号:23 页码:374-380
关键词	gate sweep technique gate control lateral PNP bipolar transistor charge separation
ISSN号	1000-3290
中文摘要	A new test structure of gate controlled lateral PNP bipolar transistors designed and fabricated. An independent gate terminal is patterned on the oxide layer above the active base region of normal lateral PNP bipolar transistors. According to the gate sweep technique, by sweeping the voltage applied to the gate terminal, one can obtain the characteristic of base current versus gate voltage. The quantitative variations of oxide trapped charges and interface traps are analytically estimated and numerically calculated, and the radiation induced defects in the gate controlled lateral PNP bipolar transistors during Co-60-gamma irradiation and annealing at room temperature are separated independently. The test structures and measurements of the bipolar transistors used in the experiment are introduced in detail in this paper.
学科主题	Physics
收录类别	SCI
资助信息	National Natural Science Foundation of China 10975182
公开日期	2013-11-07
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/2735]
专题	新疆理化技术研究所_新疆维吾尔自治区电子信息材料与器件重点实验室
作者单位	Xinjiang Tech Inst Phys & Chem CAS, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Xi Shan-Bin,Lu Wu,Ren Di-Yuan,et al. Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors[J]. ACTA PHYSICA SINICA,2012,61(23):374-380.
APA	Xi Shan-Bin.,Lu Wu.,Ren Di-Yuan.,Zhou Dong.,Wen Lin.,...&Wu Xue.(2012).Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors.ACTA PHYSICA SINICA,61(23),374-380.
MLA	Xi Shan-Bin,et al."Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors".ACTA PHYSICA SINICA 61.23(2012):374-380.