High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer | |
Jiang, Haiyan2,3; Li, Bo2,3; Wei, Yuning2,3; Feng, Shun3; Di, Zengfeng1; Xue, Zhongying1; Sun, Dongming2,3; Liu, Chi2,3 | |
刊名 | NANOTECHNOLOGY |
2022-08-20 | |
卷号 | 33期号:34页码:7 |
关键词 | graphene germanium 2D material Fermi-level pinning photodetector |
ISSN号 | 0957-4484 |
DOI | 10.1088/1361-6528/ac6ff0 |
通讯作者 | Xue, Zhongying(simsnow@mail.sim.ac.cn) ; Sun, Dongming(dmsun@imr.ac.cn) ; Liu, Chi(chiliu@imr.ac.cn) |
英文摘要 | The metal/germanium (Ge) photodetectors have attracted much attention for their potential applications in on-chip optoelectronics. One critical issue is the relatively large dark current due to the limited Schottky potential barrier height of the metal/germanium junction, which is mainly caused by the small bandgap of Ge and the Fermi energy level pinning effect between the metal and Ge. The main technique to solve this problem is to insert a thin interlayer between the metal and Ge. However, so far, the dark current of the photodetectors is still large when using a bulk-material insertion layer, while when using a two-dimensional insertion layer, the area of the insertion layer is too small to support a mass production. Here, we report a gold/graphene/germanium photodetector with a wafer-scale graphene insertion layer using a 4 inch graphene-on-germanium wafer. The insertion layer significantly increases the potential barrier height, leading to a dark current as low as 1.6 mA cm(-2), and a responsivity of 1.82 A W-1 which are the best results for metal/Ge photodetectors reported so far. Our work contributes to the mass production of high-performance metal/Ge photodetectors. |
资助项目 | National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[61704175] ; National Natural Science Foundation of China[62125406] ; Chinese Academy of Sciences (SYNL Young Talent Project)[SKLA-2019-03] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; National Key Research and Development Program of China[2021YFA1200013] ; Shandong Natural Science Foundation of China[ZR2019ZD49] |
WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
语种 | 英语 |
出版者 | IOP Publishing Ltd |
WOS记录号 | WOS:000807167200001 |
资助机构 | National Natural Science Foundation of China ; Chinese Academy of Sciences (SYNL Young Talent Project) ; Strategic Priority Research Program of Chinese Academy of Sciences ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; National Key Research and Development Program of China ; Shandong Natural Science Foundation of China |
内容类型 | 期刊论文 |
源URL | [http://ir.imr.ac.cn/handle/321006/174257] |
专题 | 金属研究所_中国科学院金属研究所 |
通讯作者 | Xue, Zhongying; Sun, Dongming; Liu, Chi |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China |
推荐引用方式 GB/T 7714 | Jiang, Haiyan,Li, Bo,Wei, Yuning,et al. High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer[J]. NANOTECHNOLOGY,2022,33(34):7. |
APA | Jiang, Haiyan.,Li, Bo.,Wei, Yuning.,Feng, Shun.,Di, Zengfeng.,...&Liu, Chi.(2022).High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer.NANOTECHNOLOGY,33(34),7. |
MLA | Jiang, Haiyan,et al."High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer".NANOTECHNOLOGY 33.34(2022):7. |
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