2D FeOCl: A Highly In-Plane Anisotropic Antiferromagnetic Semiconductor Synthesized via Temperature-Oscillation Chemical Vapor Transport

doi:10.1002/adma.202108847

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	2D FeOCl: A Highly In-Plane Anisotropic Antiferromagnetic Semiconductor Synthesized via Temperature-Oscillation Chemical Vapor Transport
	Zeng, Yi 4; Gu, Pingfan 5; Zhao, Zijing 4; Zhang, Biao 4; Lin, Zhongchong 5; Peng, Yuxuan 5; Li, Wei 4; Zhao, Wanting 4; Leng, Yuchen 1; Tan, Pingheng 1
刊名	ADVANCED MATERIALS
	2022-02-24
页码	7
关键词	2D materials antiferromagnetic semiconductors FeOCl in-plane anisotropy single crystals spin-phonon coupling
ISSN号	0935-9648
DOI	10.1002/adma.202108847
通讯作者	Tian, Kesong(tks@pku.edu.cn) ; Hou, Yanglong(hou@pku.edu.cn)
英文摘要	2D van der Waals (vdW) transition-metal oxyhalides with low symmetry, novel magnetism, and good stability provide a versatile platform for conducting fundamental research and developing spintronics. Antiferromagnetic FeOCl has attracted significant interest owing to its unique semiconductor properties and relatively high Neel temperature. Herein, good-quality centimeter-scale FeOCl single crystals are controllably synthesized using the universal temperature-oscillation chemical vapor transport (TO-CVT) method. The crystal structure, bandgap, and anisotropic behavior of the 2D FeOCl are explored in detail. The absorption spectrum and electrical measurements reveal that 2D FeOCl is a semiconductor with an optical bandgap of approximate to 2.1 eV and a resistivity of approximate to 10(-1) omega m at 295 K, and the bandgap increases with decreasing thickness. Strong in-plane optical and electrical anisotropies are observed in 2D FeOCl flakes, and the maximum resistance anisotropic ratio reaches 2.66 at 295 K. Additionally, the lattice vibration modes are studied through temperature-dependent Raman spectra and first-principles density functional calculations. A significant decrease in the Raman frequencies below the Neel temperature is observed, which results from the strong spin-phonon coupling effect in 2D FeOCl. This study provides a high-quality low-symmetry vdW magnetic candidate for miniaturized spintronics.
资助项目	National Key Research and Development Program of China[2017YFA0206301] ; National Key Research and Development Program of China[2018YFA0306900] ; National Natural Science Foundation of China[51631001] ; National Natural Science Foundation of China[51672010]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	WILEY-V C H VERLAG GMBH
WOS记录号	WOS:000760266300001
资助机构	National Key Research and Development Program of China ; National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/173314]
专题	金属研究所_中国科学院金属研究所
通讯作者	Tian, Kesong; Hou, Yanglong
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 4.Peking Univ, Beijing Innovat Ctr Engn Sci & Adv Technol, Beijing Key Lab Magnetoelect Mat & Devices, Sch Mat Sci & Engn, Beijing 100871, Peoples R China 5.Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
推荐引用方式 GB/T 7714	Zeng, Yi,Gu, Pingfan,Zhao, Zijing,et al. 2D FeOCl: A Highly In-Plane Anisotropic Antiferromagnetic Semiconductor Synthesized via Temperature-Oscillation Chemical Vapor Transport[J]. ADVANCED MATERIALS,2022:7.
APA	Zeng, Yi.,Gu, Pingfan.,Zhao, Zijing.,Zhang, Biao.,Lin, Zhongchong.,...&Hou, Yanglong.(2022).2D FeOCl: A Highly In-Plane Anisotropic Antiferromagnetic Semiconductor Synthesized via Temperature-Oscillation Chemical Vapor Transport.ADVANCED MATERIALS,7.
MLA	Zeng, Yi,et al."2D FeOCl: A Highly In-Plane Anisotropic Antiferromagnetic Semiconductor Synthesized via Temperature-Oscillation Chemical Vapor Transport".ADVANCED MATERIALS (2022):7.