A silicon-graphene-silicon transistor with an improved current gain

doi:10.1016/j.jmst.2021.06.061

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	A silicon-graphene-silicon transistor with an improved current gain
	Liu, Chi 1; Yang, Xu-Qi 1,2; Ma, Wei 1,2; Wang, Xin-Zhe 1,2; Jiang, Hai-Yan 1,2; Ren, Wen-Cai 1,2; Sun, Dong-Ming 1,2
刊名	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
	2022-03-30
卷号	104 页码:127-130
关键词	Semiconductor metal semiconductor transistor Graphene base transistor Graphene base heterojunction transistor
ISSN号	1005-0302
DOI	10.1016/j.jmst.2021.06.061
通讯作者	Sun, Dong-Ming(dmsun@imr.ac.cn)
英文摘要	In history, semiconductor-metal-semiconductor transistor (SMST) was proposed for frequency improve-ment. However, a general fabrication method is still missing due to the unsolved technological problem of deposition of a general crystalline semiconductor on metal, and a thinner metal base is also difficult to be fabricated with high quality. Recently, due to the atomic thickness of graphene, the concept of semiconductor-graphene-semiconductor transistor (SGST) has emerged which leads to the renaissance of SMST, however the experimental study is in its infancy. In this letter, SMST and SGST are fabricated using Si membrane transfer. It is found the common base current gain can be improved from about 0.5% in a Si-Au-Si transistor to about 1% in a Si-Gr-Ge one, and to above 10% in a Si-Gr-Si one, which is attributed to both the ultra-thin thickness and the quantum capacitance effect of graphene. (c) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
资助项目	National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[61704175] ; Chinese Academy of Sciences (SYNL Young Talent Project)[SKLA-2019-03]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	JOURNAL MATER SCI TECHNOL
WOS记录号	WOS:000773043300005
资助机构	National Natural Science Foundation of China ; Chinese Academy of Sciences (SYNL Young Talent Project)
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/172945]
专题	金属研究所_中国科学院金属研究所
通讯作者	Sun, Dong-Ming
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Liu, Chi,Yang, Xu-Qi,Ma, Wei,et al. A silicon-graphene-silicon transistor with an improved current gain[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2022,104:127-130.
APA	Liu, Chi.,Yang, Xu-Qi.,Ma, Wei.,Wang, Xin-Zhe.,Jiang, Hai-Yan.,...&Sun, Dong-Ming.(2022).A silicon-graphene-silicon transistor with an improved current gain.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,104,127-130.
MLA	Liu, Chi,et al."A silicon-graphene-silicon transistor with an improved current gain".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 104(2022):127-130.