Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN-GaN-InGaN barriers

doi:10.1063/5.0071035

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN-GaN-InGaN barriers
	L. Cheng; J. Zhang; J. Wang; J. Zhang; J. Yang; S. Wu; Q. Qian and H. Chen
刊名	Journal of Applied Physics
	2021
卷号	130 期号:18
ISSN号	218979
DOI	10.1063/5.0071035
英文摘要	In this study, an InGaN laser diode (LD) with InGaN-GaN-InGaN quantum barriers was proposed and studied systematically. The energy band diagrams, stimulated recombination rate, optical field distribution, current distribution near the active region, and power-current-voltage performance curves were investigated. The simulation results suggest that the LD with InGaN-GaN-InGaN quantum barriers has better performance than the LD with conventional GaN and InGaN quantum barriers because of the properly adjusted refraction index profile and energy band diagrams, which are advantageous to both the suppressed leakage of the optical field and electrons out of and the enhanced injection of holes into the active region. 2021 Author(s).
URL标识	查看原文
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/65671]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	L. Cheng,J. Zhang,J. Wang,et al. Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN-GaN-InGaN barriers[J]. Journal of Applied Physics,2021,130(18).
APA	L. Cheng.,J. Zhang.,J. Wang.,J. Zhang.,J. Yang.,...&Q. Qian and H. Chen.(2021).Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN-GaN-InGaN barriers.Journal of Applied Physics,130(18).
MLA	L. Cheng,et al."Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN-GaN-InGaN barriers".Journal of Applied Physics 130.18(2021).