A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes

	A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes
	Y. R. Chen; Z. W. Zhang; G. Q. Miao; H. Jiang and H. Song
刊名	Materials Letters
	2022
卷号	308 期号:4
ISSN号	0167-577X
DOI	10.1016/j.matlet.2021.131144
英文摘要	In this work, a planar In0.53Ga0.47As/InP avalanche photodiode (APD) working in both front- and back-illumination modes is fabricated for a comparative study. The great differences in the electrical and spectral performances between the two operating approaches can be originated from the PIN junction in the InP cap layer with high electric field, which plays the role of short-wavelength photoelectric conversion before the InP multiplication layer punches through under front-illumination.
URL标识	查看原文
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/65104]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y. R. Chen,Z. W. Zhang,G. Q. Miao,et al. A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes[J]. Materials Letters,2022,308(4).
APA	Y. R. Chen,Z. W. Zhang,G. Q. Miao,&H. Jiang and H. Song.(2022).A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes.Materials Letters,308(4).
MLA	Y. R. Chen,et al."A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes".Materials Letters 308.4(2022).