Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

doi:10.1149/2162-8777/ab85c0

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
	H. Wan,S. J. Zhou,S. Y. Lan and C. Q. Gui
刊名	Ecs Journal of Solid State Science and Technology
	2020
卷号	9 期号:4 页码:5
ISSN号	2162-8769
DOI	10.1149/2162-8777/ab85c0
英文摘要	Using finite-difference time-domain method, the light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) is investigated. Simulation results show that compared to flat sapphire substrate, the nano-patterned sapphire substrate (NPSS) expands the extraction angles of top surface and sidewalls. As a result, the LEE of transverse-magnetic (TM) polarized light is improved significantly. Roughening on the backside of n-AlGaN surface significantly enhances the LEE of top surface of thin-film flip-chip DUV LEDs. However, the LEE of sidewalls of thin-film flip-chip DUV LEDs is greatly weakened. For bare DUV LED, the LEE of flip-chip LED on NPSS is estimated to be about 15%, which is around 50% higher than that of thin-film flip-chip DUV LED with roughening on the backside of n-AlGaN surface. (C) 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.
URL标识	查看原文
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/64648]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	H. Wan,S. J. Zhou,S. Y. Lan and C. Q. Gui. Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes[J]. Ecs Journal of Solid State Science and Technology,2020,9(4):5.
APA	H. Wan,S. J. Zhou,S. Y. Lan and C. Q. Gui.(2020).Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes.Ecs Journal of Solid State Science and Technology,9(4),5.
MLA	H. Wan,S. J. Zhou,S. Y. Lan and C. Q. Gui."Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes".Ecs Journal of Solid State Science and Technology 9.4(2020):5.