Design of gain region of high-power vertical external cavity surface emitting semiconductor laser and its fabrication

doi:10.7498/aps.69.20191787

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Design of gain region of high-power vertical external cavity surface emitting semiconductor laser and its fabrication
	J. Y. Zhang,J. W. Zhang,Y. G. Zeng,J. Zhang,Y. Q. Ning,X. Zhang,L. Qin,Y. Liu and L. J. Wang
刊名	Acta Physica Sinica
	2020
卷号	69 期号:5 页码:9
ISSN号	1000-3290
DOI	10.7498/aps.69.20191787
英文摘要	The vertical external cavity surface emitting laser (VECSEL) is one of the hottest research fields of semiconductor lasers, due to its high power and good beam quality. However, there are few reports about how to systematically design the active region of VECSEL. In this paper, the gain design of quantum wells, which are the most important region within the VECSEL, is carried out. To achieve low power consumption under high temperature condition, epitaxial structure of the VECSEL is optimized by using the commercial software PICS3D. Firstly, the relationship between the structure of quantum well and the gain is simulated by the k.p method. Then, the gain spectra of quantum wells at different carrier densities and temperatures are compared with each other, and the optimal composition and thickness of quantum well are thus determined. The temperature drift coefficient is 0.36 nm/K, obtained by simulating the drift of the gain peak wavelength at the working temperature. Finally, the gain spectra of quantum wells with five different barriers are compared with each other. The slight blue shift of the gain peak in the quantum well with five different barriers accommodates the different emission thermal drifts of the quantum well at high temperature operation. With the GaAsP barriers on both sides of quantum well the gain characteristics of quantum wells can be improved efficiently. The designed structure is deposited by the MOCVD system. According to the reflection spectrum of the gain chip, measured by ellipsometer, the stop-band over 100 nm is centered at the about 970 nm wavelength, confirming accurate growth of the VECSEL. The 808 nm pump laser is focused on the surface of VECSEL chip at an incident angle from 30 degrees to 50 degrees. The VECSEL light-light characteristics are tested under the output coupling mirror with different reflectivity. The output power of VECSEL with a 97.7% reflectance output coupling mirror reaches 9.82 W at the pumping power of 35 W, without saturating the power curve. By using the external mirrors with different reflectivity, there appears the wavelength shift with the pumping power changing from 0.216 nm/W to 0.16 nm/W. Thus, the internal heating effects are different for VECSEL with different mirrors. The divergence angles at two orthogonal directions are 9.2 degrees and 9.0 degrees, respectively. And the circle profile of optical field shows good symmetry.
URL标识	查看原文
语种	中文
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/64431]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	J. Y. Zhang,J. W. Zhang,Y. G. Zeng,J. Zhang,Y. Q. Ning,X. Zhang,L. Qin,Y. Liu and L. J. Wang. Design of gain region of high-power vertical external cavity surface emitting semiconductor laser and its fabrication[J]. Acta Physica Sinica,2020,69(5):9.
APA	J. Y. Zhang,J. W. Zhang,Y. G. Zeng,J. Zhang,Y. Q. Ning,X. Zhang,L. Qin,Y. Liu and L. J. Wang.(2020).Design of gain region of high-power vertical external cavity surface emitting semiconductor laser and its fabrication.Acta Physica Sinica,69(5),9.
MLA	J. Y. Zhang,J. W. Zhang,Y. G. Zeng,J. Zhang,Y. Q. Ning,X. Zhang,L. Qin,Y. Liu and L. J. Wang."Design of gain region of high-power vertical external cavity surface emitting semiconductor laser and its fabrication".Acta Physica Sinica 69.5(2020):9.