Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM

doi:10.1088/1361-6463/ab7516

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM
	C. H. Kai,X. J. Sun,Y. P. Jia,K. Jiang,Z. M. Shi,J. W. Ben,Y. Wu,Y. Wang and D. B. Li
刊名	Journal of Physics D-Applied Physics
	2020
卷号	53 期号:23 页码:6
ISSN号	0022-3727
DOI	10.1088/1361-6463/ab7516
英文摘要	The direct characterization of carrier transport behavior at different types of dislocations in GaN is still questionable due to the current lack of feasible strategy. Herein, we developed a method by combining ultraviolet light-assisted Kelvin probe force microscope with defect selective etching technology. The dislocation types could be confirmed by the shape of the etching pit, and the photogenerated carrier recombination behavior at specific dislocation. Thus, it can be characterized by ultraviolet light-assisted Kelvin probe force microscope, which paves the way for analysis of carrier transport behavior at different types of dislocations in GaN. The screw dislocations are found to be the main non-radiative recombination centers, and mainly responsible for leakage current in GaN based device. This shows higher surface potential and higher electron concentration due to the donor defects introduced during dislocation growth. Conversely, a barrier is generated around the edge and mixed dislocations, which could suppress the non-radiative recombination at the dislocation. The present work provides a feasible way to direct characterization of specific type dislocations in GaN. Moreover, this method can be used to characterize other III-nitride materials.
URL标识	查看原文
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/64354]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	C. H. Kai,X. J. Sun,Y. P. Jia,K. Jiang,Z. M. Shi,J. W. Ben,Y. Wu,Y. Wang and D. B. Li. Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM[J]. Journal of Physics D-Applied Physics,2020,53(23):6.
APA	C. H. Kai,X. J. Sun,Y. P. Jia,K. Jiang,Z. M. Shi,J. W. Ben,Y. Wu,Y. Wang and D. B. Li.(2020).Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM.Journal of Physics D-Applied Physics,53(23),6.
MLA	C. H. Kai,X. J. Sun,Y. P. Jia,K. Jiang,Z. M. Shi,J. W. Ben,Y. Wu,Y. Wang and D. B. Li."Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM".Journal of Physics D-Applied Physics 53.23(2020):6.