Narrow-Strip 670 nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography

doi:10.1109/jphot.2019.2909887

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	Narrow-Strip 670 nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography
	H.Chen; Y.Y.Chen; F.Gao; L.Qin; C.Chen; P.Jia; Y.W.Huang
刊名	Ieee Photonics Journal
	2019
卷号	11 期号:3 页码:9
关键词	Semiconductor laser,gain-coupled,distributed-feedback,continuous,tunability,lithium isotope-separation
ISSN号	1943-0655
DOI	10.1109/jphot.2019.2909887
英文摘要	A narrow-strip single-longitudinal-mode gain-coupled distributed feedback semiconductor laser with a central wavelength of approximately 670 nm is demonstrated. We fabricate a novel micro-scale regrowth-free gain-coupled grating with an island-like shape without nanoscale gratings by i-line lithography only. The maximum output power from the fiber of the device with butterfly package is 48.1 mW at 100 mA and its slope efficiency is 0.79 W/A. The laser can be continuously tuned from 670.750 to 670.784 nm with a side-mode suppression ratio of over 40 dB, covering the absorptive peak of lithium atoms. Our easily fabricated devices have great potential as light sources in many applications such as lithium atom detectors.
URL标识	查看原文
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/63461]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	H.Chen,Y.Y.Chen,F.Gao,et al. Narrow-Strip 670 nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography[J]. Ieee Photonics Journal,2019,11(3):9.
APA	H.Chen.,Y.Y.Chen.,F.Gao.,L.Qin.,C.Chen.,...&Y.W.Huang.(2019).Narrow-Strip 670 nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography.Ieee Photonics Journal,11(3),9.
MLA	H.Chen,et al."Narrow-Strip 670 nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography".Ieee Photonics Journal 11.3(2019):9.