Improved efficiency of organic light emitting devices using graphene oxide with optimized thickness as hole injection layer
Y.Y.Guo; W.J.Wang; S.H.Li; Y.L.Liu; T.T.Liu; Q.L.Wang
刊名Solid-State Electronics
2019
卷号153页码:46-51
关键词Current efficiencyImpedance spectroscopyenhancement
ISSN号0038-1101
DOI10.1016/j.sse.2018.12.017
英文摘要Organic Light-Emitting Diodes (OLEDs) with graphene oxide (GO) as hole injection layer (HIL) have been demonstrated. The OLED devices possess structures of ITO/GO(x nm)/NPB(40 nm)/Alq(3)(70 nm)/LiF(0.5 nm)/Al (100 nm), it is found that as the thickness of GO-HIL is a 3.6 nm an optimal current efficiency of 4.4 cd/A and a brightness of 15,770 cd/m(2) were achieved, respectively, which are higher than that of reference device without GO-HIL layer (1 cd/A and 4735 cd/m(2)). We reason that the improvement of electroluminescent (EL) intensity would be ascribed to the smoothed ITO surface and the reduced hole-injection barrier due to the high work function of GO layer. In terms of the impendence spectroscopy analysis of hole-only devices (HODS), for electrical character of device is mainly depends on the bulk resistance of the HODS. As a result, the optimized EL device offers fallen bulk resistances, finally, the improvement in EL performance was obviously realized.
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语种英语
内容类型期刊论文
源URL[http://ir.ciomp.ac.cn/handle/181722/63352]  
专题中国科学院长春光学精密机械与物理研究所
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Y.Y.Guo,W.J.Wang,S.H.Li,et al. Improved efficiency of organic light emitting devices using graphene oxide with optimized thickness as hole injection layer[J]. Solid-State Electronics,2019,153:46-51.
APA Y.Y.Guo,W.J.Wang,S.H.Li,Y.L.Liu,T.T.Liu,&Q.L.Wang.(2019).Improved efficiency of organic light emitting devices using graphene oxide with optimized thickness as hole injection layer.Solid-State Electronics,153,46-51.
MLA Y.Y.Guo,et al."Improved efficiency of organic light emitting devices using graphene oxide with optimized thickness as hole injection layer".Solid-State Electronics 153(2019):46-51.
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