Static and Dynamic Characteristics of In(AsSb)/GaAs Submonolayer Lasers

doi:10.1109/jqe.2019.2913877

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Static and Dynamic Characteristics of In(AsSb)/GaAs Submonolayer Lasers
	D.Quandt; D.Arsenijevic; A.Strittmatte; D.H.Bimberg
刊名	Ieee Journal of Quantum Electronics
	2019
卷号	55 期号:3 页码:7
关键词	Submonolayer (SML),quantum dot (QD),laser diode,high-speed modulation,quantum-well lasers,dot lasers,gain,threshold,Engineering,Physics,Optics
ISSN号	0018-9197
DOI	10.1109/jqe.2019.2913877
英文摘要	The gain spectrum and modulation characteristics of ridge-waveguide laser diodes with InAs/GaAs submono-layer (SML) stacks have been investigated in detail. A comparison between active regions with intentionally altered inhomogeneous broadening is presented. The inhomogeneous broadening is controlled via Sb incorporation into the SML allowing for broader gain bandwidth and 3-D confinement of holes. In that way, the degree of charge-carrier localization can be tuned at a given wavelength. A slight performance loss at a given operation wavelength is observed due to a smaller optical overlap for the intentionally broadened gain medium. Still, bit rates up to 17 GBit/s can be obtained with the prospect for wider wavelength tunability. Multiple stacks of Sb-containing SMLs are suggested to enhance the optical overlap, which eventually allows for widely tunable quantum-dot lasers with larger modulation bandwidth.
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/63102]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	D.Quandt,D.Arsenijevic,A.Strittmatte,et al. Static and Dynamic Characteristics of In(AsSb)/GaAs Submonolayer Lasers[J]. Ieee Journal of Quantum Electronics,2019,55(3):7.
APA	D.Quandt,D.Arsenijevic,A.Strittmatte,&D.H.Bimberg.(2019).Static and Dynamic Characteristics of In(AsSb)/GaAs Submonolayer Lasers.Ieee Journal of Quantum Electronics,55(3),7.
MLA	D.Quandt,et al."Static and Dynamic Characteristics of In(AsSb)/GaAs Submonolayer Lasers".Ieee Journal of Quantum Electronics 55.3(2019):7.