Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist-Free Complementary Electronic Devices

doi:10.1002/adma.201804470

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist-Free Complementary Electronic Devices
	Liu, T.; Xiang, D.; Zheng, Y.; Wang, Y. A.; Wang, X. Y.; Wang, L.; He, J.; Liu, L.; Chen, W.
刊名	Advanced Materials
	2018
卷号	30 期号:52 页码:9
关键词	homogeneous p-n junctions and inverters MoTe2/BN heterostructures nonvolatile and programmable photodoping in MoTe2 devices photoresist-free transition-metal dichalcogenides black phosphorus mos2 wse2 inverters graphene diodes Chemistry Science & Technology - Other Topics Materials Science Physics
ISSN号	0935-9648
DOI	10.1002/adma.201804470
英文摘要	2D transition-metal dichalcogenide (TMD)-based electronic devices have been extensively explored toward the post-Moore era. Huge efforts have been devoted to modulating the doping profile of TMDs to achieve 2D p-n junctions and inverters, the fundamental units in logic circuits. Here, photoinduced nonvolatile and programmable electron doping in MoTe2 based on a heterostructure of MoTe2 and hexagonal boron nitride (BN) is reported. The electron transport property in the MoTe2 device can be precisely controlled by modulating the magnitude of the photodoping gate exerted on BN. Through tuning the polarity of the photodoping gate exerted on BN under illumination, such a doping effect in MoTe2 can be programmed with excellent repeatability and is retained for over 14 d in the absence of an external perturbation. By spatially controlling the photodoping region in MoTe2, a photoresist-free p-n junction and inverter in the MoTe2 homostructure are achieved. The MoTe2 diode exhibits a near-unity ideality factor of approximate to 1.13 with a rectification ratio of approximate to 1.7 x 10(4). Moreover, the gain of the MoTe2 inverter reaches approximate to 98, which is among the highest values for 2D-material-based homoinverters. These findings promise photodoping as an effective method to achieve 2D-TMDs-based nonvolatile and programmable complementary electronic devices.
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/60740]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Liu, T.,Xiang, D.,Zheng, Y.,et al. Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist-Free Complementary Electronic Devices[J]. Advanced Materials,2018,30(52):9.
APA	Liu, T..,Xiang, D..,Zheng, Y..,Wang, Y. A..,Wang, X. Y..,...&Chen, W..(2018).Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist-Free Complementary Electronic Devices.Advanced Materials,30(52),9.
MLA	Liu, T.,et al."Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist-Free Complementary Electronic Devices".Advanced Materials 30.52(2018):9.