Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser

doi:10.3788/irla201847.0503001

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	Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser
	Li Xiang; Wang Hong; Qiao Zhongliang; Zhang Yu; Xu Yingqiang; Niu Zhichuan; Tong Cunzhu; Liu Chongyang
刊名	Infrared and Laser Engineering
	2018
卷号	47 期号:5
关键词	Gallium compounds Antimony compounds III-V semiconductors Indium antimonides Quantum well lasers Semiconductor lasers Semiconductor quantum wells
ISSN号	1007-2276
DOI	10.3788/irla201847.0503001
英文摘要	2 m InGaSb/AlGaAsSb single quantum well(SQW) laser with low threshold current density of ~131 A/cm2 and its ideality factor n was presented. The ideality factors n of the central p-n junction and the n-GaSb/metal junction sum up to be the total ideality factor n of the laser. The total ideality factor n decreases from 4.0 to 3.3 when the temperature was increased from 20 to 80. The results are in good agreement with the applied theoretical model as well as the ideality factor n of the individual GaSb -based junctions(p-n junction, GaSb/metal junction etc. ). 2018, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/60707]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Li Xiang,Wang Hong,Qiao Zhongliang,et al. Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser[J]. Infrared and Laser Engineering,2018,47(5).
APA	Li Xiang.,Wang Hong.,Qiao Zhongliang.,Zhang Yu.,Xu Yingqiang.,...&Liu Chongyang.(2018).Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser.Infrared and Laser Engineering,47(5).
MLA	Li Xiang,et al."Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser".Infrared and Laser Engineering 47.5(2018).