With the rapid evolution of microelectronics and nanofabrication technologies, the feature sizes of large-scale integrated circuits continue to move toward the nanoscale. There is a strong need to improve the quality and efficiency of integrated circuit inspection, but it remains a great challenge to provide both rapid imaging and circuit node-level high-resolution images simultaneously using a conventional microscope. This paper proposes a nondestructive, high-throughput, multiscale correlation imaging method that combines atomic force microscopy (AFM) with microlens-based scanning optical microscopy. In this method, a microlens is coupled to the end of the AFM cantilever and the sample-facing side of the microlens contains a focused ion beam deposited tip which serves as the AFM scanning probe. The introduction of a microlens improves the imaging resolution of the AFM optical system, providing a 3–4× increase in optical imaging magnification while the scanning imaging throughput is improved ≈8×. The proposed method bridges the resolution gap between traditional optical imaging and AFM, achieves cross-scale rapid imaging with micrometer to nanometer resolution, and improves the efficiency of AFM-based large-scale imaging and detection. Simultaneously, nanoscale-level correlation between the acquired optical image and structure information is enabled by the method, providing a powerful tool for semiconductor device inspection.