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	Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence
	Yao Xing ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Feng Liang ;   Shuangtao Liu ;   Liqun Zhang
刊名	NANOSCALE RESEARCH LETTERS
	2019
卷号	14页码:88
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29739]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Feng Liang ; Shuangtao Liu ; Liqun Zhang. Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence[J]. NANOSCALE RESEARCH LETTERS,2019,14:88.
APA	Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Feng Liang ; Shuangtao Liu ; Liqun Zhang.(2019).Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence.NANOSCALE RESEARCH LETTERS,14,88.
MLA	Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Feng Liang ; Shuangtao Liu ; Liqun Zhang."Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence".NANOSCALE RESEARCH LETTERS 14(2019):88.

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