Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer

	Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer
	J. Yang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li
刊名	Optics and Laser Technology
	2019
卷号	111 页码:810-813
语种	英语
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29524]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	J. Yang ; D.G. Zhao ;D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li. Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer[J]. Optics and Laser Technology,2019,111:810-813.
APA	J. Yang ; D.G. Zhao ;D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li.(2019).Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer.Optics and Laser Technology,111,810-813.
MLA	J. Yang ; D.G. Zhao ;D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li."Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer".Optics and Laser Technology 111(2019):810-813.